Miniature semiconductor network diode and gate

Claim 1

A MINIATURE SOLID STATE SEMICONDUCTOR CIRCUIT DEVICE FOR PROVIDING A LOGICAL FUNCTION COMPRISING AN INSULATING SUBSTRATE, A STRIP OF SINGLE CRYSTAL SEMICONDUCTOR MATERIAL OF ONE TYPE CONDUCTIVITY MOUNTED ON SAID SUBSTRATE, SAID STRIP HAVING FIRST AND SECOND STRIP PORTIONS, FOUR LONGITUDINALLY SPACED LAYER REGIONS OF DIFFUSED OPPOSITE TYPE SEMICONDUCTOR MATERIAL IN SAID FIRST STRIP PORTION FOR DEFINING THEREIN FOUR P-N JUNCTION DIODES, SAID SECOND STRIP PORTION DEFINING A BIAS RESISTOR EXTENDING FROM ONE END THEREOF TO ITS JUNCTURE WITH SAID FIRST STRIP PORTION, AN INPUT LEAD CONNECTED TO EACH OF THREE OF SAID LAYER REGIONS, AN OUTPUT LEAD CONNECTED TO THE OTHER OF SAID LAYER REGIONS, CONDUCTIVE MEANS ADHERENT TO SAID FIRST STRIP PORTION MAKING LOW RESISTANCE OHMIC CONNECTION TO THE SEMICONDUCTOR MATERIAL OF SAID ONE CONDUCTIVITY TYPE OF ALL OF SAID DIODES, A BIAS LEAD CONNECTED TO SAID ONE END OF SAID SECOND STRIP PORTION FOR APPLYING A RELATIVELY LOW FORWARD BIAS VOLTAGE TO SAID DIODES IN SAID FIRST STRIP PORTION, MEANS FOR APPLYING SIGNALS TO SAID INPUT LEADS TO REVERSE BIAS SAID THREE DIODES SO THAT WHEN SAID THREE DIODES ARE SIMULTANEOUSLY REVERSE BIASED A RELATIVELY HIGH FORWARD BIAS IS APPLIED FROM SAID BIAS LEAD TO SAID OTHER DIODE TO CAUSE A RELATIVELY HIGH VOLTAGE TO APPEAR ON SAID OUTPUT LEAD, THEREBY PROVIDING AN AND LOGICAL FUNCTION.