US3132408A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making semiconductor strain sensitive devices
Assignee: General Electric Co
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Filing: 1962-01-18
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Granted: 1964-05-12
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Expires: 1982-01-18
Abstract
No abstract record available.
Inventors
- 👤 Erik M Pell
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 08:52
CPC Classifications
H; H04; H04R; H04R23/00; H04R23/006; H01; H01C; H01C10/00; H01C10/10; H01C10/12; H10; H10P; H10P32/00; H10P32/10; H10P32/17; H10P32/171; H10P32/18; Y; Y10; Y10S; Y10S148/00; Y10S148/062
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
59 words
THE METHOD OF FABRICATING A SEMICONDUCTIVE STRAIN SENSITIVE DEVICE, WHICH METHOD COMPRISES: (A) HEATING A LOW RESISTIVITY MONOCRYSTALLINE SEMICONDUCTIVE MATERIAL BODY IN THE PRESENCE OF A DEEPLEVEL IMPURITY THEREFOR FOR A TIME SUFFICIENT TO EFFECT SUBSTANTIAL DIFFUSION OF SAID IMPURITY INTO SAID BODY; (B) REMOVING ALL OF SAID IMPURITY EXTERNAL TO SAID BODY FROM THE PRESENCE OF SAID BODY;
Claim 2
Independent Claim
59 words
THE METHOD OF FABRICATING A SEMICONDUCTIVE STRAIN SENSITIVE DEVICE, WHICH METHOD COMPRISES: (A) HEATING A LOW RESISTIVITY MONOCRYSTALLINE SEMICONDUCTIVE MATERIAL BODY IN THE PRESENCE OF A DEEPLEVEL IMPURITY THEREFOR FOR A TIME SUFFICIENT TO EFFECT SUBSTANTIAL DIFFUSION OF SAID IMPURITY INTO SAID BODY; (B) REMOVING ALL OF SAID IMPURITY EXTERNAL TO SAID BODY FROM THE PRESENCE OF SAID BODY;
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1967-05-12 | 1967-11-11 | 1968-05-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1971-05-12 | 1971-11-11 | 1972-05-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1975-05-12 | 1975-11-11 | 1976-05-12 | $7700.00 | Window Closed / Lapsed |