US3112850A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dicing of micro-semiconductors
Assignee: RTX Corp
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Filing: 1962-10-31
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Granted: 1963-12-03
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Expires: 1982-10-31
Abstract
No abstract record available.
Inventors
- 👤 Domenick J Garibotti
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 08:00
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0428; B; B01; B01J; B01J19/00; B01J19/08; B01J19/10; B23; B23K; B23K15/00; B23K15/08; B28; B28D; B28D1/00; B28D1/22; B28D1/221; B28D5/00; B28D5/0005; B28D5/0011; H01; H01J; H01J37/00; H01J37/30; H01J37/3002; H01J37/3005; H01J37/305; H01J37/3053; H01J37/3056; H10P50/00; H10P50/20; H10P95/00; Y; Y10; Y10T; Y10T225/00; Y10T225/10; Y10T225/12
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
67 words
THE METHOD OF FABRICATING MICRO-SEMICONDUCTOR DEVICES FROM A SLAB OF SEMICONDUCTOR MATERIAL INCLUDING THE STEPS OF PLACING SAID SLAB OF SEMICONDUCTOR MATERIAL IN THE VACUUM CHAMBER OF AN ELECTRON BEAM MACHINE, FOCUSING THE WORKING BEAM OF THE ELECTRON BEAM MACHINE ON SAID SLAB, DEFLECTING SAID WORKING BEAM IN A PREDETERMINED PATTERN TO SCRIBE SAID SLAB, IMMERSING SAID SCRIBED SLAB IN THE FLUID MEDIUM OF AN ULTRASONIC CELL,
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1966-12-02 | 1967-06-03 | 1967-12-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1970-12-02 | 1971-06-03 | 1971-12-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1974-12-02 | 1975-06-03 | 1975-12-03 | $7700.00 | Window Closed / Lapsed |