Method of making plural layer thin film devices

Claim 1

A METHOD OF APPLYING A THIN FILM ON A SUBSTRATE BY VAPORIZATION TECHNIQUES COMPRISING THE STEPS OF ARRANGING SAID SUBSTRATE AT FIRST AND SECOND POSITIONS TO RECEIVE VAPORIZED MATERIALS; POSITIONING A MELT OF ALUMINUM AND GOLD TO PROVIDE VAPORIZED MATERIAL TO SAID SUBSTRATE WHILE SAID SUBSTRATE IS AT ITS FIRST POSITION; PLACING A FIRST THICKNESS OF PIECES OF TUNGSTEN INTO A CONTAINER, PLACING A THICKNESS OF SILICON MONOXIDE ON SAID FIRST THICKNESS OF TUNGSTEN, AND PLACING A THICKNESS OF PIECES OF TUNGSTEN ON SAID SILICON MONOXIDE; POSITIONING SAID CONTAINER TO PROVIDE VAPORIZED MATERIAL TO SAID SUBSTRATE WHILE SAID SUBSTRATE IS AT ITS SECOND POSITION; PLACING A SOURCE OF ALUMINUM TO PROVIDE VAPORIZED MATERIAL MATERIAL WHILE SAID SUBSTRATE IS AT ITS SECOND POSITION; APPLYING INCREASINGLY HIGHER HEAT TO FRACTIONALLY VAPORIZE SAID MELT TO INITIALLY DEPOSIT A FIRST LAYER OF ALUMINUM AND THEN A FIRST LAYER OF GOLD ON SAID SUBSTRATE, MOVING SAID SUBSTRATE TO SAID SECOND POSITION, APPLYING INCREASINGLY HIGHER HEAT TO SAID MELT OF ALUMINUM AND TO SAID CONTAINER TO FRACTIONALLY VAPORIZE SAID ALUMINUM AND THEN SAID SILICON MONOXIDE TO THEREBY COAT SAID FIRST LAYER OF GOLD WITH ALUMINUM AND NEXT COAT SAID ALUMINUM WITH A LAYER OF SILICON MONOXIDE, MOVING SAID SUBSTRATE BACK TO SAID FIRST POSITION, AND APPLYING A SECOND LAYER OF GOLD ON SAID SUBSTRATE WHEREBY GOOD ADHESION OF THE VARIOUS LAYERS IS OBTAINED AND WHEREBY HIGH INSULATION BETWEEN THE LAYERS OF GOLD IS ALSO OBTAINED.

Claim 2

A METHOD OF APPLYING A THIN FILM ON A SUBSTRATE BY VAPORIZATION TECHNIQUES COMPRISING THE STEPS OF ARRANGING SAID SUBSTRATE AT FIRST AND SECOND POSITIONS TO RECEIVE VAPORIZED MATERIALS; POSITIONING A MELT OF ALUMINUM AND GOLD TO PROVIDE VAPORIZED MATERIAL TO SAID SUBSTRATE WHILE SAID SUBSTRATE IS AT ITS FIRST POSITION; PLACING A FIRST THICKNESS OF PIECES OF TUNGSTEN INTO A CONTAINER, PLACING A THICKNESS OF SILICON MONOXIDE ON SAID FIRST THICKNESS OF TUNGSTEN, AND PLACING A THICKNESS OF PIECES OF TUNGSTEN ON SAID SILICON MONOXIDE; POSITIONING SAID CONTAINER TO PROVIDE VAPORIZED MATERIAL TO SAID SUBSTRATE WHILE SAID SUBSTRATE IS AT ITS SECOND POSITION; PLACING A SOURCE OF ALUMINUM TO PROVIDE VAPORIZED MATERIAL MATERIAL WHILE SAID SUBSTRATE IS AT ITS SECOND POSITION; APPLYING INCREASINGLY HIGHER HEAT TO FRACTIONALLY VAPORIZE SAID MELT TO INITIALLY DEPOSIT A FIRST LAYER OF ALUMINUM AND THEN A FIRST LAYER OF GOLD ON SAID SUBSTRATE, MOVING SAID SUBSTRATE TO SAID SECOND POSITION, APPLYING INCREASINGLY HIGHER HEAT TO SAID MELT OF ALUMINUM AND TO SAID CONTAINER TO FRACTIONALLY VAPORIZE SAID ALUMINUM AND THEN SAID SILICON MONOXIDE TO THEREBY COAT SAID FIRST LAYER OF GOLD WITH ALUMINUM AND NEXT COAT SAID ALUMINUM WITH A LAYER OF SILICON MONOXIDE, MOVING SAID SUBSTRATE BACK TO SAID FIRST POSITION, AND APPLYING A SECOND LAYER OF GOLD ON SAID SUBSTRATE WHEREBY GOOD ADHESION OF THE VARIOUS LAYERS IS OBTAINED AND WHEREBY HIGH INSULATION BETWEEN THE LAYERS OF GOLD IS ALSO OBTAINED.