Method for producing a silicon semiconductor device

Claim 1

A METHOD OF MAKING A SILICON ELECTRIC SEMI-CONDUCTOR DEVICE HAVING A MOLYBDENUM CARRIER PLATE, COMPRISING HEATING A SILICON BODY IN FACE-TO-FACE CONTACT WITH A GOLD FOIL CONTAINING DOPING SUBSTANCE, TO DISSOLVE A PORTION OF THE SILICON BODY AND FORM A GOLD-SILICON MELT, AND THEN COOLING TO FORM A GOLD-SILICON ALLOY ON THE SILICON BODY AND TO SEGREGATE RECRYSTALLIZED SILICON OUT IF THE MELT AND TO DEPOSIT THE RECRYSTALLIZED SILICON UPON THE UNDISSOLVED PART OF THE SILCON BODY, THE RECRYSTALLIZED SILICON CONTAINING SAID DOPING SUBSTANCE, THE DOPING SUBSTANCE BEING CHOSEN TO CONFER THE OPPOSITE CONDUCTANCE TYPE OF SAID SILICON, THUS PRODUCING A GOLD-SILICON ALLOY ELECTRODE ON THE SILICON BODY AND A P-N JUNCTION BETWEEN THE SILICON BODY AND THE SAID ELECTRODE, JOINING THE MOLYBDENUM CARRIER PLATE TO SAID GOLD-SILICON ALLOY ELECTRODE BY SEPARATELY JOINING GOLD TO THE CARRIER PLATE TO PROVIDE A GILDED SURFACE THEREON, AND THEREAFTER JOINING SAID GILDED SURFACE TO THE FOLD-SILICON ALLOY ELECTRODE BY HEATING THEM IN FACE-TO-FACE CONTACT TO A TEMPERATURE OF 400* TO 450* C., TO TEMPORARILY MELT THE GOLD-SILICON ALLOY AND TO ALLOYBOND THE GOLD SURFACE OF THE CARRIER PLATE TO THE BODY, THE GOLD COATING OF THE CARRIER PLATE HAVING A THICKNESS NOT MORE THAN ONE-THIRTIETH THAT OF THE GOLD FOIL USED FOR ALLOYING TO THE SILICON BODY, THE GILDED SURFACE OF THE MOLYBDENUM PLATE BEING FORMED BY ELECTRODE-DEPOSITING THE GOLD DIRECTLY UPON THE MOLYBDENUM PLATE, AND BURNING SAID GOLD INTO THE SURFACE OF THE MOLYBDENUM.