US3067071A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor devices and methods of applying metal films thereto
Assignee: International Business Machines Corp
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Filing: 1960-01-04
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Granted: 1962-12-04
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Expires: 1980-01-04
Abstract
No abstract record available.
Inventors
- 👤 Walter E Mutter
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 17:22
CPC Classifications
H; H10; H10P; H10P95/00; H10W; H10W74/00; H10W74/40; H10W74/43; Y; Y10; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
169 words
THE METHOD OF MAKING AN ALLOY-JUNCTION SEMICONDUCTOR DEVICE COMPRISING: COATING A PORTION OF A SURFACE OF A SEMICONDUCTOR BODY OF A GIVEN CONDUCTIVITY TYPE WITH A METAL FILM WHICH IS OF THE OPPOSITE CONDUCTIVITY TYPE AND IS VOLATILE AT THE ALLOYING TEMPERATURE OF SAID BODY AND SAID FILM AND HAS A THICKNESS WITHIN THE RANGE OF 0.005 TO 1.0 MIL; EVAPORATING ON SAID FILM AND ON THE SURFACE OF SAID BODY ADJOINING SAID FILM, SO AS TO ENCLOSE SAID FILM COMPLETELY, A CONTINUOUS, COHERENT FILM OF SILICON MONOXIDE; AND HEATING SAID BODY AND SAID FILMS TO A TEMPERATURE AND FOR A PERIOD SUFFICIENT TO ALLOY SAID METAL FILM WITH SAID COATED PORTION OF SAID SURFACE OF SAID BODY AND TO FORM A PN JUNCTION WITHOUT CREATING DISCONTINUITIES IN THE ALLOYED PORTION, SAID SILICON MONOXIDE FILM BEING EFFECTIVE DURING SAID ALLOYING TO PREVENT THE ESCAPE OF SAID VOLATILE METAL AND THE FORMATION THEREBY ON THE UNCOATED SURFACE OF SAID BODY OF AN UNWANTED SEMICONDUCTOR SKIN OF SAID OPPOSITE CONDUCTIVITY TYPE.
Claim 2
Independent Claim
169 words
THE METHOD OF MAKING AN ALLOY-JUNCTION SEMICONDUCTOR DEVICE COMPRISING: COATING A PORTION OF A SURFACE OF A SEMICONDUCTOR BODY OF A GIVEN CONDUCTIVITY TYPE WITH A METAL FILM WHICH IS OF THE OPPOSITE CONDUCTIVITY TYPE AND IS VOLATILE AT THE ALLOYING TEMPERATURE OF SAID BODY AND SAID FILM AND HAS A THICKNESS WITHIN THE RANGE OF 0.005 TO 1.0 MIL; EVAPORATING ON SAID FILM AND ON THE SURFACE OF SAID BODY ADJOINING SAID FILM, SO AS TO ENCLOSE SAID FILM COMPLETELY, A CONTINUOUS, COHERENT FILM OF SILICON MONOXIDE; AND HEATING SAID BODY AND SAID FILMS TO A TEMPERATURE AND FOR A PERIOD SUFFICIENT TO ALLOY SAID METAL FILM WITH SAID COATED PORTION OF SAID SURFACE OF SAID BODY AND TO FORM A PN JUNCTION WITHOUT CREATING DISCONTINUITIES IN THE ALLOYED PORTION, SAID SILICON MONOXIDE FILM BEING EFFECTIVE DURING SAID ALLOYING TO PREVENT THE ESCAPE OF SAID VOLATILE METAL AND THE FORMATION THEREBY ON THE UNCOATED SURFACE OF SAID BODY OF AN UNWANTED SEMICONDUCTOR SKIN OF SAID OPPOSITE CONDUCTIVITY TYPE.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1965-12-03 | 1966-06-04 | 1966-12-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1969-12-03 | 1970-06-04 | 1970-12-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1973-12-03 | 1974-06-04 | 1974-12-04 | $7700.00 | Window Closed / Lapsed |