US3009841A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Preparation of semiconductor devices having uniform junctions
Assignee: Westinghouse Electric Corp
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Filing: 1959-03-06
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Granted: 1961-11-21
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Expires: 1979-03-06
Abstract
No abstract record available.
Inventors
- 👤 Jr John W Faust
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 16:56
CPC Classifications
H; H10; H10P; H10P32/00; H10P14/00; H10P14/60; H10P36/00; H10P95/00; H10P95/50; Y; Y10; Y10S; Y10S148/00; Y10S148/138; Y10S438/00; Y10S438/914; Y10S438/923; Y10S438/974
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
141 words
IN THE PROCESS FOR PROVIDING IN A SEMICONDUCTIVE MATERIAL A JUNCTION BETWEEN DIFFERENT TYPES OF SEMICONDUCTIVITY, THE STEPS COMPRISING, (1) MECHANICALLY ABRADING AT LEAST ONE SURFACE OF A WAFER OF THE SEMICONDUCTIVE MATERIAL HAVING A FIRST TYPE OF SEMICONDUCTIVITY, TO PRODUCE AT THE ABRADED SURFACE AN EXTENDING INTO THE WAFER THEREFROM, A REGION HAVING A CONTROLLED UNIFORM DEPTH OF DAMAGE AND DISTURBANCE WITH A HIGH DENSITY OF DISLOCATIONS, THE DEPTH OF SAID REGION BEING SUBSTANTIALLY LESS THAN THE THICKNESS OF THE WAFER, (2) PASSING A DOPING MATERIAL COMPLETELY THROUGH THE DISTURBED REGION AND ALLOWING IT TO CONTACT THE DIFFUSE INTO THE UNDISTURBED PORTION OF THE WAFER BELOW SAID DISTURBED REGION, WHEREBY A ZONE OF A SECOND TYPE SEMICONDUCTIVITY IS FORMED WITHIN THE UNDISTURBED PORTION OF THE WAFER, AND (3) THEREAFTER REMOVING ALL OF THE DISTURBED REGION OF THE WAFER BY ETCHING.
Claim 2
Dependent Claim
141 words
IN THE PROCESS FOR PROVIDING IN A SEMICONDUCTIVE MATERIAL A JUNCTION BETWEEN DIFFERENT TYPES OF SEMICONDUCTIVITY, THE STEPS COMPRISING, (1) MECHANICALLY ABRADING AT LEAST ONE SURFACE OF A WAFER OF THE SEMICONDUCTIVE MATERIAL HAVING A FIRST TYPE OF SEMICONDUCTIVITY, TO PRODUCE AT THE ABRADED SURFACE AN EXTENDING INTO THE WAFER THEREFROM, A REGION HAVING A CONTROLLED UNIFORM DEPTH OF DAMAGE AND DISTURBANCE WITH A HIGH DENSITY OF DISLOCATIONS, THE DEPTH OF SAID REGION BEING SUBSTANTIALLY LESS THAN THE THICKNESS OF THE WAFER, (2) PASSING A DOPING MATERIAL COMPLETELY THROUGH THE DISTURBED REGION AND ALLOWING IT TO CONTACT THE DIFFUSE INTO THE UNDISTURBED PORTION OF THE WAFER BELOW SAID DISTURBED REGION, WHEREBY A ZONE OF A SECOND TYPE SEMICONDUCTIVITY IS FORMED WITHIN THE UNDISTURBED PORTION OF THE WAFER, AND (3) THEREAFTER REMOVING ALL OF THE DISTURBED REGION OF THE WAFER BY ETCHING.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1964-11-20 | 1965-05-22 | 1965-11-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1968-11-20 | 1969-05-22 | 1969-11-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1972-11-20 | 1973-05-22 | 1973-11-21 | $7700.00 | Window Closed / Lapsed |