Patent US2892457A successfully refreshed from Google Patents.
US2992144A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming transistors
Assignee: Telefunken AG
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Filing: 1959-05-29
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Granted: 1961-07-11
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Expires: 1979-05-29
Abstract
No abstract record available.
Inventors
- 👤 Dehmelt Friedrich Wilhelm
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-22 20:41
CPC Classifications
H; H10; H10P; H10P10/00; H10P10/12; H10P10/128; C; C30; C30B; C30B33/00; H10P95/00; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/919; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
175 words
THE METHOD OF MAKING A COMPOSITE TRANSISTOR CRYSTAL COMPRISING FIRST AND SECOND ZONES OF ONE CONDUCTIVITY TYPE SPACED APART AND JOINED TO A THIRD ZONE OF OPPOSITE CONDUCTIVITY TYPE, INCLUDING THE FOLLOWING STEPS: MAKING A FIRST-ZONE CRYSTAL SUBSTANTIALLY UNIFORMLY DOPED TO HAVE SAID ONE CONDUCTIVITY TYPE, MAKING A SECOND-ZONE CRYSTAL MORE HEAVILY DOPED WITH A FIRST IMPURITY OF SAID ONE CONDUCTIVITY TYPE AND ALSO DOPED WITH A SECOND IMPURITY OF SAID OPPOSITE CONDUCTIVITY TYPE ADDED IN A QUANTITY INSUFFICIENT TO REVERSE SAID ONE CONDUCTIVITY TYPE OF THE SECOND-ZONE CRYSTAL, SAID IMPURITIES BEING SUBSTANTIALLY UNIFORMLY DISTRIBUTED THERETHROUGH AND THE SECOND IMPURITY HAVING A DIFFUSION CONSTANT WHICH IS LARGE AS COMPARED WITH THAT OF SAID FIRST IMPURITY, AND FUSING SAID FIRST AND SECOND ZONE CRYSTALS TOGETHER AT A TEMPERATURE AND FOR A TIME OF HEATING SUFFICIENT FOR SOME OF SAID SECOND IMPURITY TO DIFFUSE PARTWAY INTO THE ADJACENT FIRST-ZONE CRYSTAL AND FORM SAID THIRD ZONE WHEREIN THE DIFFUSED SECOND IMPURITY IS PRESENT IN QUANTITY SUFFICIENT TO REVERSE THE CONDUCTIVITY WITHIN SAID THIRD ZONE TO SAID OPPOSITE TYPE.
Claim 2
Independent Claim
175 words
THE METHOD OF MAKING A COMPOSITE TRANSISTOR CRYSTAL COMPRISING FIRST AND SECOND ZONES OF ONE CONDUCTIVITY TYPE SPACED APART AND JOINED TO A THIRD ZONE OF OPPOSITE CONDUCTIVITY TYPE, INCLUDING THE FOLLOWING STEPS: MAKING A FIRST-ZONE CRYSTAL SUBSTANTIALLY UNIFORMLY DOPED TO HAVE SAID ONE CONDUCTIVITY TYPE, MAKING A SECOND-ZONE CRYSTAL MORE HEAVILY DOPED WITH A FIRST IMPURITY OF SAID ONE CONDUCTIVITY TYPE AND ALSO DOPED WITH A SECOND IMPURITY OF SAID OPPOSITE CONDUCTIVITY TYPE ADDED IN A QUANTITY INSUFFICIENT TO REVERSE SAID ONE CONDUCTIVITY TYPE OF THE SECOND-ZONE CRYSTAL, SAID IMPURITIES BEING SUBSTANTIALLY UNIFORMLY DISTRIBUTED THERETHROUGH AND THE SECOND IMPURITY HAVING A DIFFUSION CONSTANT WHICH IS LARGE AS COMPARED WITH THAT OF SAID FIRST IMPURITY, AND FUSING SAID FIRST AND SECOND ZONE CRYSTALS TOGETHER AT A TEMPERATURE AND FOR A TIME OF HEATING SUFFICIENT FOR SOME OF SAID SECOND IMPURITY TO DIFFUSE PARTWAY INTO THE ADJACENT FIRST-ZONE CRYSTAL AND FORM SAID THIRD ZONE WHEREIN THE DIFFUSED SECOND IMPURITY IS PRESENT IN QUANTITY SUFFICIENT TO REVERSE THE CONDUCTIVITY WITHIN SAID THIRD ZONE TO SAID OPPOSITE TYPE.
References Cited (Backward Citations)
US2701326A
Cited
US2793145A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1964-07-10 | 1965-01-09 | 1965-07-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1968-07-10 | 1969-01-09 | 1969-07-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1972-07-10 | 1973-01-09 | 1973-07-11 | $7700.00 | Window Closed / Lapsed |