Patent US1951733A successfully refreshed from Google Patents.
US2969296A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thermal expansion fixture for spacing vaporized contacts on semiconductor devices
Assignee: AT&T Inc
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Filing: 1958-12-08
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Granted: 1961-01-24
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Expires: 1978-12-08
Abstract
No abstract record available.
Inventors
- 👤 David J Walsh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-22 18:32
CPC Classifications
H; H10; H10P; H10P95/00; C; C23; C23C; C23C14/00; C23C14/04; C23C14/042; H10W; H10W20/00; H10W20/40; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/944; Y10S438/945
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
129 words
THE METHOD OF DEPOSTING ADJACENT SPACED CONTACTS OF TWO DIFFERENT CONTACT METALS ON A SEMICONDUCTOR BODY COMPRISING POSITIONING A SEMICONDUCTOR BODY BETWEEN A BASE MEMBER AND AN APERTURED MASK MEMBER HAVING A TEMPERATURE COEFFICIENT OF EXPANSION DIFFERENT FROM SAID BASE MEMBER AND INCLUDING A FREE END FIXED TO SAID BASE MEMBER AT A POINT ON THE OPPOSITE SIDE OF SAID SEMICONDUCTOR BODY FROM SAID FREE END, SECURING SAID SEMICONDUCTOR BODY TO SAID BASE MEMBER, EVAPORATING A FIRST CONTACT METAL THROUGH THE APERATURES OF SAID MASK MEMBER AT A FIRST AMBIENT TEMPERATURE AND EVAPORATING A SECOND CONTACT METAL THROUGH THE APERTURES OF SAID MASK MEMBER AT A SECOND AMBIENT TEMPERATURE, SAID AMBIENT TEMPERATURES BEING SUFFICIENTLY DIFFERENT TO CAUSE SAID APERTURES TO MOVE WITH RESPECT TO SAID BASE AND THE SEMICONDUCTOR
Claim 2
Independent Claim
129 words
THE METHOD OF DEPOSTING ADJACENT SPACED CONTACTS OF TWO DIFFERENT CONTACT METALS ON A SEMICONDUCTOR BODY COMPRISING POSITIONING A SEMICONDUCTOR BODY BETWEEN A BASE MEMBER AND AN APERTURED MASK MEMBER HAVING A TEMPERATURE COEFFICIENT OF EXPANSION DIFFERENT FROM SAID BASE MEMBER AND INCLUDING A FREE END FIXED TO SAID BASE MEMBER AT A POINT ON THE OPPOSITE SIDE OF SAID SEMICONDUCTOR BODY FROM SAID FREE END, SECURING SAID SEMICONDUCTOR BODY TO SAID BASE MEMBER, EVAPORATING A FIRST CONTACT METAL THROUGH THE APERATURES OF SAID MASK MEMBER AT A FIRST AMBIENT TEMPERATURE AND EVAPORATING A SECOND CONTACT METAL THROUGH THE APERTURES OF SAID MASK MEMBER AT A SECOND AMBIENT TEMPERATURE, SAID AMBIENT TEMPERATURES BEING SUFFICIENTLY DIFFERENT TO CAUSE SAID APERTURES TO MOVE WITH RESPECT TO SAID BASE AND THE SEMICONDUCTOR
References Cited (Backward Citations)
US2239770A
Cited
US2286819A
Cited
US2453582A
Cited
US2482329A
Cited
US2634322A
Cited
US2804405A
Cited
US2766144A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1964-01-24 | 1964-07-25 | 1965-01-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1968-01-24 | 1968-07-25 | 1969-01-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1972-01-24 | 1972-07-25 | 1973-01-24 | $7700.00 | Window Closed / Lapsed |