US2954307A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Grain boundary semiconductor device and method
Assignee: Individual
•
Filing: 1957-03-18
•
Granted: 1960-09-27
•
Expires: 1977-03-18
Abstract
No abstract record available.
Inventors
- 👤 Shockley William
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 01:27
CPC Classifications
H; H10; H10D; H10D10/00; H10D30/00; H10D30/80; H10D62/00; H10D62/01; H10D62/10; H10D99/00; H10P; H10P32/00; H10P95/00; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/922; Y10S438/965
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
132 words
THE METHOD OF MAKING A GRAIN BOUNDARY SEMICONDUCTOR WHICH COMPRISES THE STEPS OF FORMING A SEMICONDUCTOR CRYSTAL OF ONE CONDUCTIVITY TYPE HAVING A GRAIN BOUNDARY EXTENDING TO ONE SURFACE THEREOF SUBJECTING THE CRYSTAL TO A DIFFUSION OF IMPURITY ATOMS OF ONE TYPE, SAID ATOMS DIFFUSING INTO SAID CRYSTAL TO FORM A LAYER OF OPPOSITE CONDUCTIVITY TYPE ON SAID CRYSTAL, SAID LAYER EXTENDIND DEEP INTO THE CRYSTAL AT THE GRAIN BOUNDARY, AND SUBJECTING THE CRYSTAL TO A DIFFUSION OF IMPURITY ATOMS OF ANOTHER TYPE SAID ATOMS DIFFUSING INTO THE CRYSTAL AND FORMING A LAYER OF THE SAME CONDUCTIVITY TYPE AS THE ORIGINAL CRYSTAL, SAID LAYER EXTENDING DEEP INTO THE CRYSTAL AT THE GRAIN BOUNDARY TO THEREBY FORM A REGION OF THE SAME CONDUCTIVITY TYPE SEPARATING A PAIR OF REGIONS OF OPPOSITE CONDUCTIVITY TYPE.
Claim 2
Independent Claim
132 words
THE METHOD OF MAKING A GRAIN BOUNDARY SEMICONDUCTOR WHICH COMPRISES THE STEPS OF FORMING A SEMICONDUCTOR CRYSTAL OF ONE CONDUCTIVITY TYPE HAVING A GRAIN BOUNDARY EXTENDING TO ONE SURFACE THEREOF SUBJECTING THE CRYSTAL TO A DIFFUSION OF IMPURITY ATOMS OF ONE TYPE, SAID ATOMS DIFFUSING INTO SAID CRYSTAL TO FORM A LAYER OF OPPOSITE CONDUCTIVITY TYPE ON SAID CRYSTAL, SAID LAYER EXTENDIND DEEP INTO THE CRYSTAL AT THE GRAIN BOUNDARY, AND SUBJECTING THE CRYSTAL TO A DIFFUSION OF IMPURITY ATOMS OF ANOTHER TYPE SAID ATOMS DIFFUSING INTO THE CRYSTAL AND FORMING A LAYER OF THE SAME CONDUCTIVITY TYPE AS THE ORIGINAL CRYSTAL, SAID LAYER EXTENDING DEEP INTO THE CRYSTAL AT THE GRAIN BOUNDARY TO THEREBY FORM A REGION OF THE SAME CONDUCTIVITY TYPE SEPARATING A PAIR OF REGIONS OF OPPOSITE CONDUCTIVITY TYPE.
Claim 3
Dependent Claim
78 words
A GRAIN BOUNDARY SEMICONDUCTOR DEVICE COMPRISING A BODY OF SEMICONDUCTOR MATERIAL OF ONE CONDUCTIVITY TYPE HAVING A GRAIN BOUNDARY THEREIN EXTENDING TO AT LEAST ONE SURFACE OF THE BODY, A DIFFUSION REGION OF OPPOSITE CONDUCTIVITY TYPE DIFFUSED ON SAID ONE SURFACE OF SAID BODY AND FORMING A JUNCTION THEREWITH, AND A DIFFUSION REGION OF THE SAME CONDUCTIVITY TYPE SEPARATING SAID REGION INTO TWO PORTIONS ALONG THE GRAIN BOUNDARY AND FORMING A JUNCTION WITH EACH OF SAID SEPARATED PORTIONS.
Claim 4
Dependent Claim
78 words
A GRAIN BOUNDARY SEMICONDUCTOR DEVICE COMPRISING A BODY OF SEMICONDUCTOR MATERIAL OF ONE CONDUCTIVITY TYPE HAVING A GRAIN BOUNDARY THEREIN EXTENDING TO AT LEAST ONE SURFACE OF THE BODY, A DIFFUSION REGION OF OPPOSITE CONDUCTIVITY TYPE DIFFUSED ON SAID ONE SURFACE OF SAID BODY AND FORMING A JUNCTION THEREWITH, AND A DIFFUSION REGION OF THE SAME CONDUCTIVITY TYPE SEPARATING SAID REGION INTO TWO PORTIONS ALONG THE GRAIN BOUNDARY AND FORMING A JUNCTION WITH EACH OF SAID SEPARATED PORTIONS.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1963-09-27 | 1964-03-28 | 1964-09-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1967-09-27 | 1968-03-28 | 1968-09-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1971-09-27 | 1972-03-28 | 1972-09-27 | $7700.00 | Window Closed / Lapsed |