US2950996A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electrical resistance material and method of making same
Assignee: Beckman Coulter Inc
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Filing: 1957-12-05
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Granted: 1960-08-30
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Expires: 1977-12-05
Abstract
No abstract record available.
Inventors
- 👤 Sr Thomas M Place
- 👤 Jr Thomas M Place
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 16:13
CPC Classifications
H; H01; H01B; H01B1/00; H01B1/14; H01C; H01C17/00; H01C17/06; H01C17/065; H01C17/06506; H01C17/06513; H01C17/06553; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49082; Y10T29/49099
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
144 words
THE METHOD OF MAKING AN ELECTRICAL RESISTANCE ELEMENT WHICH COMPRISES: FORMING A VISCOUS MIXTURE CONTAINING A VOLATILE LIQUID CARRIER, POWER-LIKE PARTICLES OF GLASS, AT LEAST ONE NOBLE METAL AND AT LEAST ONE COMPLEX METAL-OXIDE SEMICONDUCTOR HAVING MELTING POINTS ABOVE THAT OF SAID GLASS, THE SOLID ELEMENTS OF SAID MIXTURE INCLUDING ABOUT 84-98 PERCENT BY WEIGHT OF SAID GLASS, ABOUT 1-15 PERCENT BY WEIGHT OF SUCH METAL, AND NOT MORE THAN ABOUT 3 PERCENT BY WEIGHT OF SUCH OXIDE SEMICONDUCTOR, FORMING AT LEAST A PORTION OF SAID MIXTURE INTO A FILM ON A SUPPORTING STRUCTURE, HEATING SAID FILM TO AN INTERMEDIATE TEMPERATURE TO REMOVE THE VOLATILES AND ORGANIC MATERIAL THEREIN, ADDITIONALLY HEATING SAID FILM TO A PREDETERMINED TEMPERATURE EXCEEDING THE MELTING POINT OF SAID GLASS BUT LESS THAN THE MELTING POINTS OF SUCH METAL AND OXIDE SEMICONDUCTORS, AND COOLING SAID FILM TO A SOLID STATE.
Claim 2
Independent Claim
144 words
THE METHOD OF MAKING AN ELECTRICAL RESISTANCE ELEMENT WHICH COMPRISES: FORMING A VISCOUS MIXTURE CONTAINING A VOLATILE LIQUID CARRIER, POWER-LIKE PARTICLES OF GLASS, AT LEAST ONE NOBLE METAL AND AT LEAST ONE COMPLEX METAL-OXIDE SEMICONDUCTOR HAVING MELTING POINTS ABOVE THAT OF SAID GLASS, THE SOLID ELEMENTS OF SAID MIXTURE INCLUDING ABOUT 84-98 PERCENT BY WEIGHT OF SAID GLASS, ABOUT 1-15 PERCENT BY WEIGHT OF SUCH METAL, AND NOT MORE THAN ABOUT 3 PERCENT BY WEIGHT OF SUCH OXIDE SEMICONDUCTOR, FORMING AT LEAST A PORTION OF SAID MIXTURE INTO A FILM ON A SUPPORTING STRUCTURE, HEATING SAID FILM TO AN INTERMEDIATE TEMPERATURE TO REMOVE THE VOLATILES AND ORGANIC MATERIAL THEREIN, ADDITIONALLY HEATING SAID FILM TO A PREDETERMINED TEMPERATURE EXCEEDING THE MELTING POINT OF SAID GLASS BUT LESS THAN THE MELTING POINTS OF SUCH METAL AND OXIDE SEMICONDUCTORS, AND COOLING SAID FILM TO A SOLID STATE.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1963-08-30 | 1964-02-29 | 1964-08-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1967-08-30 | 1968-02-29 | 1968-08-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1971-08-30 | 1972-02-29 | 1972-08-30 | $7700.00 | Window Closed / Lapsed |