Method of manufacturing semiconductive devices

Claim 1

A METHOD OF FORMING AN ALLOY ELECTRODE ON A SEMICONDUCTIVE BODY, COMPRISING PROVIDING AN APERTURED JIG MEMBER ON THE SEMI-CONDUCTIVE BODY SO THAT THE APERTURE EXTENDS SUBSTANTIALLY VERTICALLY ABOVE THE BODY, INTRODUCING A WIRE COMPRISING A CONDUCTIVITY-DETERMINING IMPURITY INTO THE APERTURE SO THAT ONE END CONTACTS THE BODY, SAID WIRE BEING ABLE TO ALLOY WITH THE SEMI-CONDUCTIVITY BODY WHEN CONTACTING THE LATTER AT A TEMPERATURE BELOW THE MELTING POINT OF THE WIRE AND THE BODY, HEATING THE ASSEMBLY AT A TEMPERATURE ABOVE THE MELTING POINTS OF THE ALLOY BUT BELOW THE MELTING POINTS OF THE WIRE AND BODY SO THAT THE WIRE END MELTS WITHIN THE CONFINES OF THE JIGIFORMING AN ALLOY WITH THE CONTACTED PORTION OF THE SEMICONDUCTIVE BODY AND SO THAT THE WIRE GRAVITY-SAGS DOWNWARD AS ITS END CONTACTING THE SEMI-CONDUCTIVE BODY CONTINUES TO MELT, THEREAFTER ARRESTING THE DOWNWARD MOTION OF THE WIRE AT A POINT REMOTE FROM ITS CONTACTING END AFTER A PREDETERMINED PORTION OF THE WIRE END HAS BEEN MELTED AND TO PREVENT FURTHER MELTING OF THE SOLID WIRE BY TERMINATING ITS CONTACT WITH THE SEMI-CONDUCTIVE BODY, AND THEREAFTER COOLING THE ASSEMBLY, CAUSING THE MELT TO REFREEZE AND PRODUCING AN IMPURITY-DOPED REGROWN SEMICONDUCTIVE REGION ON AN UNMELTED PORTION OF THE BODY.

Claim 2

A METHOD OF FORMING AN ALLOY ELECTRODE ON A SEMICONDUCTIVE BODY, COMPRISING PROVIDING AN APERTURED JIG MEMBER ON THE SEMI-CONDUCTIVE BODY SO THAT THE APERTURE EXTENDS SUBSTANTIALLY VERTICALLY ABOVE THE BODY, INTRODUCING A WIRE COMPRISING A CONDUCTIVITY-DETERMINING IMPURITY INTO THE APERTURE SO THAT ONE END CONTACTS THE BODY, SAID WIRE BEING ABLE TO ALLOY WITH THE SEMI-CONDUCTIVITY BODY WHEN CONTACTING THE LATTER AT A TEMPERATURE BELOW THE MELTING POINT OF THE WIRE AND THE BODY, HEATING THE ASSEMBLY AT A TEMPERATURE ABOVE THE MELTING POINTS OF THE ALLOY BUT BELOW THE MELTING POINTS OF THE WIRE AND BODY SO THAT THE WIRE END MELTS WITHIN THE CONFINES OF THE JIGIFORMING AN ALLOY WITH THE CONTACTED PORTION OF THE SEMICONDUCTIVE BODY AND SO THAT THE WIRE GRAVITY-SAGS DOWNWARD AS ITS END CONTACTING THE SEMI-CONDUCTIVE BODY CONTINUES TO MELT, THEREAFTER ARRESTING THE DOWNWARD MOTION OF THE WIRE AT A POINT REMOTE FROM ITS CONTACTING END AFTER A PREDETERMINED PORTION OF THE WIRE END HAS BEEN MELTED AND TO PREVENT FURTHER MELTING OF THE SOLID WIRE BY TERMINATING ITS CONTACT WITH THE SEMI-CONDUCTIVE BODY, AND THEREAFTER COOLING THE ASSEMBLY, CAUSING THE MELT TO REFREEZE AND PRODUCING AN IMPURITY-DOPED REGROWN SEMICONDUCTIVE REGION ON AN UNMELTED PORTION OF THE BODY.