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US2846340A Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor devices and method of making same

Assignee: RCA Corp
•
Filing: 1956-06-18
•
Granted: 1958-08-05
•
Expires: 1976-06-18
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Abstract

No abstract record available.

Inventors

  • 👤 Dietrich A Jenny

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-22 20:20
CPC Classifications
H; H10; H10P; H10P95/00; H10D; H10D99/00; H10P10/00; H10P10/12; H10P50/00; H10P50/60; H10P50/64; H10P50/642; H10P50/646; H10P50/69; H10P50/691

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 37 words
A TRANSISTOR COMPRISING A SUBSTRATE OF N-TYPE GALLIUM ARSENIDE AS COLLECTOR, A BASE REGION OF GALLIUM ARSENIDE CONTAINING CADMIUM SO AS TO BE P-TYPE, AND AN EMITTER CONSISTING OF A CADMIUM ARSENIDE LAYER ON SAID BASE REGION.
Claim 2
Dependent Claim 37 words
A TRANSISTOR COMPRISING A SUBSTRATE OF N-TYPE GALLIUM ARSENIDE AS COLLECTOR, A BASE REGION OF GALLIUM ARSENIDE CONTAINING CADMIUM SO AS TO BE P-TYPE, AND AN EMITTER CONSISTING OF A CADMIUM ARSENIDE LAYER ON SAID BASE REGION.

References Cited (Backward Citations)

GB707008A Cited
US2759861A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1961-08-04 1962-02-03 1962-08-05 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1965-08-04 1966-02-03 1966-08-05 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1969-08-04 1970-02-03 1970-08-05 $7700.00 Window Closed / Lapsed

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