Junction transistors and processes for producing them

Claim 1

IN THE PROCESS OF PRODUCING A JUNCTION TRANSISTOR, THE STEPS COMPRISING APPLYING TO A BODY OF SUBSTANTIALLY INTRINSIC, HIGH RESISTIVITY CRYSTALLINE SEMICONDUCTOR MATERIAL, A MEMBER MELTING AT A LOWER TEMPERATURE THAN SAID BODY, SAID MEMBER COMPRISING (1) A SMALL PROPORTION OF A FIRST DOPING MATERIAL TO CONFER A FIRST TYPE OF SEMICONDUCTIVITY, THE FIRST DOPING MATERIAL BEING FAST DIFFUSING, AND (2) A LARGE PORPORTION OF A SECOND DOPING MATERIAL CONFERRING THE OPPOSITE TYPE OF SEMICONDUCTIVITY, THE SECOND DOPING MATERIAL BEING SLOWER DIFFUSING THAN SAID FIRST DOPING MATERIAL, HEATING THE BODY AND APPLIED MEMBER TO A TEMPERATURE TO CAUSE THE MEMBER TO MELT AND TO DISSOLVE THEREIN A PART OF THE BODY MATERIAL IN IMMEDIATE CONTACT THEREWITH, COOLING THE BODY AND MOLTEN MEMBER TO A LOWER TEMPERATURE WITH A TEMPERATURE GRADIENT BETWEEN THE MEMBER AND THE BODY SUCH THAT THE BODY IS SLIGHTLY COOLER THAN THE MOLTEN MEMBER TO CAUSE THE BODY MATERIAL DISSOLVED IN THE MOLTEN MEMBER TO CAUSE THE BODY A LAYER ON THE BODY, MAINTAINING THE ASSEMBLY AT A TEMPERATURE NEAR THE TEMPERATURE AT WHICH THE MEMBER MELTS TO CAUSE DIFFUSION OF THE TWO DOPING MATERIALS FROM THE MEMBER AND FROM THE REDEPOSITED LAYER INTO THE ADJACENT BODY MATERIAL, AND FINALLY COOLING THE ASSEMBLY, THE DIFFUSION PRODUCING A FIRST LAYER OF LOW RESISTIVITY BODY MATERIAL OF THE FIRST TYPE OF SEMICONDUCTIVITY IN CONTACT WITH A LARGE AREA OF THE INTRINSIC BODY MATERIAL, A SECOND LAYER OF OPPOSITE TYPE OF SEMICONDUCTIVITY OF BODY MATERIAL SUPERIMPOSED ON THE FIRST LAYER, THE SECOND LAYER INCLUDING THE REDEPOSITED BODY MATERIAL, AND THE SOLIDIFIED MEMBER BEING DISPOSED IN CONTACT WITH THE ENTIRE SECOND LAYER.