Formation of junctions in semiconductors

Claim 1

A METHOD OF PROVIDING A SILICON SEMICONDUCTOR BODY CONSISTING OF TWO ZONES OF A FIRST TYPE CONDUCTIVITY AND A THIRD ZONE OF A SECOND TYPE CONDUCTIVITY THEREBETWEEN COMPRISING SUBJECTING IN A VACCUM CHAMBER OPPOSITE SURFACES OF A SILICON BLOCK OF SAID SECOND TYPE CONDUCTIVITY TO AN ELECTRON BOMBARDMENT TO REMOVE OXIDES, CARBONATES, AND OTHER CONTAMINATION THEREFROM, EVAPORATING ONTO SAID BOMBARDED SURFACES IN SAID VACCUM CHAMBER A SIGNIFICANT IMPURITY SELECTED FROM THE GROUP CONSISTING OF TRIVALENT AND PENTAVALENT ELEMENTS WHILE SAID BODY IS IN SAID CHAMBER TO IMPART SAID FIRST TYPE CONDUCTIVITY WHEREBY THE IMPURITY DIFFUSES THROUGH SAID SURFACES INTO THE BLOCK TO FORM A SILICON SEMICONDUCTOR BODY CONSISTING OF TWO ZONES OF SAID FIRST TYPE CONDUCTITITY AND A ZONE OF SAID SECOND TYPE CONDUCTIVIEY THEREBETWEEN, AND THEREAFTER, AGAIN SUBJECTING SAID SURFACES IN SAID VACCUM CHAMBER TO ELECTRON BOMBARDMENT TO EMOVE THE EXCESS OF SAID IMPURITY FROM SAID SURFACE.