US2802159A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Junction-type semiconductor devices
Assignee: Raytheon Co
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Filing: 1953-10-20
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Granted: 1957-08-06
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Expires: 1973-10-20
Abstract
No abstract record available.
Inventors
- 👤 Stump Harvey
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 15:16
CPC Classifications
H; H10; H10D; H10D99/00; C; C23; C23C; C23C14/00; C23C14/04; C25; C25F; C25F3/00; C25F3/02; C25F3/14; H10D62/00; H10D62/10; H10P; H10P10/00; H10P95/00; H10P95/50; Y; Y10; Y10S; Y10S148/00; Y10S148/106; Y10S148/169
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
118 words
A LOW-BASE-RESISTANCE FUSED JUNCTION TRANSISTOR COMPRISING: A SEMICONDUCTOR SPECIMEN HAVING FIRST AND SECOND OPPOSING SURFACES; AN EMITTER RECTIFYING BARRIER IN SAID SPECIMEN ADJACENT AND FIRST SURFACE; A FIRST ALLOY BUTTON FUSED WITH SAID SPECIMEN ON SAID FIRST SURFACE, THE PERIPHERY OF SAID FIRST ALLOY BUTTON OVERSHADOWING THE EXTERNAL PERIPHERY OF SAID EMITTER RECTIFYING BARRIER; A COLLECTOR RECTIFYING BARRIER IN SAID SPECIMEN ADJACENT SAID SECOND SURFACE AND DIRECTLY OPPOSITE SAID EMITTER RECTIFYING BARRIER; A SECOND ALLOY BUTTON FUSED WITH SAID SPECIMEN ON SAID SECOND SURFACE, THE PERIPHERY OF SAID SECOND ALLOY BUTTTON OVERSHADOWING THE EXTERNAL PERIPHERY OF SAID COLLECTOR RECTIFYING BARRIER; AND A CONDUCTING METALLIC LAYER ON THE UNMASKED PORTION OF AT LEAST ONE OF SAID AND SECOND SURFACES.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1960-08-05 | 1961-02-04 | 1961-08-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1964-08-05 | 1965-02-04 | 1965-08-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1968-08-05 | 1969-02-04 | 1969-08-06 | $7700.00 | Window Closed / Lapsed |