US2731704A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making transistors
Assignee: Raytheon Co
•
Filing: 1952-12-27
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Granted: 1956-01-24
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Expires: 1972-12-27
Abstract
No abstract record available.
Inventors
- 👤 Spanos John
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 15:11
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/50; H10P50/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
44 words
THE METHOD OF MAKING A TRANSISTOR WHICH INCLUDES THE STEPS OF FORMING A BODY OF INDIUM, WASHING SAID BODY IN A DILUTE SOLUTION OF NITRIC ACID, RINSING SAID BODY IN PURE WATER, DRYING SAID BODY, AND FUSING SAID BODY TO AN N-TYPE SEMICONDUCTOR MEMBER.
Claim 2
Independent Claim
44 words
THE METHOD OF MAKING A TRANSISTOR WHICH INCLUDES THE STEPS OF FORMING A BODY OF INDIUM, WASHING SAID BODY IN A DILUTE SOLUTION OF NITRIC ACID, RINSING SAID BODY IN PURE WATER, DRYING SAID BODY, AND FUSING SAID BODY TO AN N-TYPE SEMICONDUCTOR MEMBER.
References Cited (Backward Citations)
US2644852A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1959-01-23 | 1959-07-25 | 1960-01-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1963-01-23 | 1963-07-25 | 1964-01-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1967-01-23 | 1967-07-25 | 1968-01-24 | $7700.00 | Window Closed / Lapsed |