US2697269A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making semiconductor translating devices
Assignee: AT&T Inc
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Filing: 1950-07-24
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Granted: 1954-12-21
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Expires: 1970-07-24
Abstract
No abstract record available.
Inventors
- 👤 Calvin S Fuller
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-22 21:04
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/80
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
70 words
THE METHOD OF ALTERING THE ELECTRICAL CHARACTERISTICS OF A CIRCUIT ELEMENT HAVING A SEMICONDUCTIVE BODY AND AT LEAST TWO CONTACTS THERETO WHICH COMPRISES POLISHING A PORTION OF THE SURFACE OF THE BODY, COATING ONE OF SAID CONTACTS WITH A LAYER OF A SIGNIFICANT IMPURITY BEARING COMPOUND, MOUNTING THE COATED CONTACT ON THE POLISHED SURFACE OF THE BODY, AND CAUSING ELECTRIC CURRENT TO FLOW BETWEEN THE BODY AND THE COATED CONTACT.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1957-12-20 | 1958-06-21 | 1958-12-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1961-12-20 | 1962-06-21 | 1962-12-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1965-12-20 | 1966-06-21 | 1966-12-21 | $7700.00 | Window Closed / Lapsed |