US2547406A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and means for controlling the resistance of oxidic semiconductors
Assignee: AT&T Inc
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Filing: 1947-05-08
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Granted: 1951-04-03
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Expires: 1967-05-08
Abstract
No abstract record available.
Inventors
- 👤 Francis J Morin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 07:58
CPC Classifications
H; H01; H01C; H01C7/00; H01C7/04; H01C7/042; H01C7/043
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
66 words
A THERMALLY RESPONSIVE SEMICONDUCTOR HAVING A HIGH NEGATIVE TEMPERATURE COEFFICIENT OF RESISTANCE COMPRISING A HEAT TREATED BODY OF INTIMATELY MIXED MANGANESE, NICKLE AND BERYLLIUM OXIDES, AND ELECTRODES ATTACHED TO SAID BODY, THE METALLIC ELEMENTS OF SAID BODY CONSISTING OF MANGANESE AND NICKLE IN THE RATIO OF 4 ATOMS TO 1 RESPECTIVELY AND AN AMOUNT OF BERYLLIUM OXIDE APPROXIMATELY 13.1 PER CENT OF THE TOTAL MATERIAL PRESENT.
Claim 2
Dependent Claim
66 words
A THERMALLY RESPONSIVE SEMICONDUCTOR HAVING A HIGH NEGATIVE TEMPERATURE COEFFICIENT OF RESISTANCE COMPRISING A HEAT TREATED BODY OF INTIMATELY MIXED MANGANESE, NICKLE AND BERYLLIUM OXIDES, AND ELECTRODES ATTACHED TO SAID BODY, THE METALLIC ELEMENTS OF SAID BODY CONSISTING OF MANGANESE AND NICKLE IN THE RATIO OF 4 ATOMS TO 1 RESPECTIVELY AND AN AMOUNT OF BERYLLIUM OXIDE APPROXIMATELY 13.1 PER CENT OF THE TOTAL MATERIAL PRESENT.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1954-04-02 | 1954-10-02 | 1955-04-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1958-04-02 | 1958-10-02 | 1959-04-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1962-04-02 | 1962-10-02 | 1963-04-03 | $7700.00 | Window Closed / Lapsed |