Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
64 words
1 . A method for fabrication of carbon nanotubes film, comprising the steps of: (a) Synthesizing catalyst layer consisted of at least one of the transition metals and related alloy, compound, or composite; (b) Synthesizing carbon nanotubes film on said catalyst layer using hydrocarbon precursor by chemical vapor deposition in the pressure of 10 −4 torr to 1 atm. and temperature of 300-800° C.
Claim 2
Dependent Claim
64 words
1 . A method for fabrication of carbon nanotubes film, comprising the steps of: (a) Synthesizing catalyst layer consisted of at least one of the transition metals and related alloy, compound, or composite; (b) Synthesizing carbon nanotubes film on said catalyst layer using hydrocarbon precursor by chemical vapor deposition in the pressure of 10 −4 torr to 1 atm. and temperature of 300-800° C.
Claim 3
Dependent Claim
49 words
2 . A method for fabrication of field emission cathodes, comprising the steps of: (a) Synthesizing conductive layer on substrate; (b) Using photolithography or screen-printing process to form patterns using dielectric materials as insulator. (c) Selectively growth of carbon nanotubes film arrays by using method of claim 1 .
Claim 4
Dependent Claim
48 words
3 . A field emission devices comprising: (a) A cathode consisted of a substrate, conductive layer and electron emission layer, vacuum gap and an anode; (b) A conductive layer on the surface of said substrate; (c) An electron emission layer consisted of carbon nanotubes on said conductive layer;
Claim 5
Dependent Claim
48 words
3 . A field emission devices comprising: (a) A cathode consisted of a substrate, conductive layer and electron emission layer, vacuum gap and an anode; (b) A conductive layer on the surface of said substrate; (c) An electron emission layer consisted of carbon nanotubes on said conductive layer;
Claim 6
Dependent Claim
112 words
4 . The method of claim 1 , wherein said catalyst layer consists of at least one of the transition metals comprising Ni, Pd, Pt, Fe, Ru, Os, Co, Rh, Ir, Cu, Ag, Au, Zn, Cd, Mn, Tc, Re, Cr, Mo, W, V, Nb, Ta, Ti, Zr Hf, Sc, Y, La. Wherein said related alloy, compound, or composite which contains at least one of the transition metals, comprising Ni/Fe, Ni/Co, Ni/Cr, Ni/Ti, Ni/Mo, Ni/Al, Ni/W, Ni/Si, Ni/Ge, Ni/C, Fe/Co, Fe/Cr, Fe/Ti, Fe/Mo, Fe/Al, Fe/W, Fe/Si, Fe/Ge, Fe/C, Co/Cr, Co/Ti, Co/Mo, Co/Al, Co/W, Co/Si, Co/C, Cu/Cr, Cu/Ti, Cu/Mo, Cu/Al, Cu/W, Cu/Si, Cu/Ge, Cu/C. The thickness of the catalyst layer is below 100 μm.
Claim 7
Dependent Claim
39 words
5 . The method of claim 1 , wherein said catalyst layer is prepared by at least one method selected from the group of screen-printing, sputtering, evaporation, vacuum arc, pulsed-laser ablation, electroplating, sol-gel, electrochemical, chemical, and chemical vapor depositions.
Claim 8
Dependent Claim
37 words
6 . The method of claim 1 , wherein said carbon nanotubes have a diameter in the range of 1-500 μm, length of 1 nm-10 μm. The carbon nanotubes have a shape includes cylindrical, spherical, toroid, helical.
Claim 9
Dependent Claim
57 words
7 . The method of claim 1 , wherein said hydrocarbon precursor comprises at least one precursor selected from the group of acetylene, ethylene, propylene, butene, methane, ethane, propane, butane, pentane, pentanes, hexane, cyclohexane, benzene, and toluene. The hydrocarbon precursor is diluted comprises at least one gas selected from the group of hydrogen, nitrogen, argon, helium, neon.
Claim 10
Dependent Claim
31 words
8 . The method of claim 1 , wherein said chemical vapor deposition comprises thermal chemical vapor deposition, plasma enhanced (microwave or radio frequency) chemical vapor deposition, hot-filament chemical vapor deposition.
Claim 11
Dependent Claim
41 words
9 . The method of claim 2 , wherein said conductive layer comprises at least one material selected from the group consisting of Cr, Al, Au, Ag, Cr, Ti, Cu, Ni, Fe, Co, Pt, Mo, W, ZnO, InO, ITO (indium-tin oxide).
Claim 12
Dependent Claim
27 words
10 . The method of claim 2 , wherein said dielectric materials comprise silicon oxide, silicon nitride, magnesium oxide, tantalum oxide, titanium oxide and tungsten oxide films.
Claim 13
Dependent Claim
29 words
11 . The methods of claim 2 , wherein said substrate comprises at least one material selected from the group consisting of glass, semiconductor, metal, alloy, ceramic, composite materials.
Claim 14
Dependent Claim
45 words
12 . The method of claim 3 , wherein said anode comprises at least a conductive substrate or a conductive layer said in claim 9 on substrate said of claim 11 . For display devices, the anode comprises phosphor, transparent conductive layer and glass substrate.
Claim 15
Dependent Claim
40 words
13 . A method of controlling shape, diameter and length and density of the carbon nanotubes in the film by selecting the transition metal said in claim 4 and concentration of the transition metal in the alloys, compounds, or composites.
Claim 16
Dependent Claim
16 words
14 . A flat panel display devices comprising the field emission device of claim 1 .
Claim 17
Dependent Claim
29 words
15 . Vacuum electronic devices comprising microwave amplifier, vacuum-electronic sensor, vacuum pressure gauge, spectrometer, electron microscopy, electron beam source, by using the field emission device of claim 1 .
Claim 18
Dependent Claim
16 words
16 . A cold cathode light source comprising using the field emission device of claim 1.