Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To form, with excellent controllability, an impurity diffusion layer whose surface concentration is sufficiently high, and whose junction depth is sufficiently shallow, and increase the density and the degree of integration of elements, by a method wherein arsenic, boron, phosphorus, etc., are directly melted in a semiconductor substrate to form the diffusion layer. CONSTITUTION:A substrate 13 to be treated in which an SiO2 film 22 for element isolation is formed on a semiconductor substrate 21 is mounted on the substrate holder 12 of a diffusion equipment. In this state, Ar or N2 is introduced into a vessel 11 from a gas introducing inlet 15, and the substrate temperature is set as a room temperature -1000 deg.C. Then AsF3 gas is made to flow at a specified flow rate into the vessel 11 to stabilize the system. In this state, a flash light is radiated from a flash lamp 17 with repetition of intermission. Thereby, As is diffused into silicon, and an As diffusion layer 25 is formed. Adsorption quantity of AsF3 can be easily controlled by controlling the substrate temperature and the partial pressure of AsF3. Therefore, the diffusion depth of impurity can be easily controlled by controlling the quantity of flash light and the repetition frequency of radiation.

Inventors

• 👤 Hitoshi Ito
• 👤 仁 伊藤

Bibliographic Details