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JPS60200898A Expired / Lapsed JP ⏱️ 0.0 years remaining

Device for depositing and forming artificial diamond

Assignee: Mitsubishi Metal Corp
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Filing: 1984-03-26
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Granted: —
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Expires: 2004-03-26
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Abstract

Abstract PURPOSE:To prompt deposition and formation of diamond crystal nuclei in the initial stage of reaction by dividing a reaction chamber into an upper chamber for depositing and forming diamond and a lower chamber for performing ion etching, and providing a means for moving a substrate vertically through the upper and the lower chamber. CONSTITUTION:A supporting material 5 mounted with a material S to be worked is moved from a vacuum charging chamber 10 onto a heating device 6 provided to a lower chamber 1B below a vacuum reaction chamber 1 where the material S to be worked is heated. The surface of the material S is activated by ion etching by generating DC glow discharge by impressing a voltage to a glow discharge generating device 8. Then, a shutter 2 is opened and the material S is transferred to an upper chamber 1A with an elevator 7 together with the supporting material 5. While a thermion emitting material 9 is in activated condition, a gaseous mixture consisting of H2 and hydrocarbon is introduced through a reaction gas introducing pipe 3 and activated, and the surface of the material S is heated. By this process, artificial diamond is deposited and formed on the surface of the material S with high deposition and forming rate.

Inventors

  • 👤 Noribumi Kikuchi
  • 👤 菊池 則文
  • 👤 Takayuki Shingyouchi
  • 👤 新行内 隆之
  • 👤 Hiroaki Yamashita
  • 👤 山下 博明
  • 👤 Akio Nishiyama
  • 👤 昭雄 西山

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-10-23 15:50
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/02; C30B29/04

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