Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To reduce the cost of a semiconductor device by exposing the base metal of a lead by cutting the surface of the lead prior to a bonding, effectively bonding a fine metal wire to the lead and eliminating the formation of a plating layer of noble metal or the like. CONSTITUTION:A leadframe 2 is placed on a base 1 which is heated to 200- 300 deg.C so that a heat sink plate 3 and a lead 4 are intimately contacted, and a fine metal wire 6 is ball bonded to the electrode of a semiconductor element 5 which is secured to the plate 3 by utilizing a capillary 7. A cutting blade 8 is pressed to the lead 4 to move it in a direction of an arrow, and the surface is cut. The wire 6 is bonded to the base metal 4a which is exposed by cutting and not oxidized. Then, a semiconductor device is manufactured by the normal method.

Inventors

• 👤 Shinji Fujino
• 👤 藤野　伸二

Bibliographic Details