Semiconductor laser device

Abstract

Abstract PURPOSE:To reduce strain, to improve reliability and to lengthen life by using Mo or W, a thermal expansion coefficient thereof is close to that of GaAs and thermal conductivity thereof is large, as a sub-mount. CONSTITUTION:The sub-mount is formed in such a manner that Cr 6, Au 7 and Pb-Sn 8 are coated onto Mo 5 with 1.0X1.0mm.<2> size and 0.2mm. thickness as electrodes in the thickness of 0.05mum, 0.06mum and 3.0mum respectively in one surface and Ni 9 and Au 10 in the thickness of 0.4mum and 0.36mum respectively through an evaporation method at the reverse side. A double-hetero type visual semiconductor laser chip 1, which has an active layer 2, which consists of GaAl As and has 0.15mum thickness, 2mum width and 300mum cavity length, and is die-bonded while an N side electrode 3 is positioned to an upper section and a P side electrode 4 to a lower section, is previously positioned onto the sub-mount, heated under a state that 10g load is applied to the chip 1, slowly cooled and die-bonded by Pb-Sn solder.

Inventors

• 👤 Nobu Satou
• 👤 佐藤　「あ」
• 👤 Mitsuhiro Mori
• 👤 森　光廣
• 👤 Masayoshi Kobayashi
• 👤 正義 小林
• 👤 Hiroshi Kato
• 👤 弘 加藤
• 👤 Masamichi Kobayashi
• 👤 正道 小林
• 👤 Makoto Haneda
• 👤 誠 羽田

Bibliographic Details