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EP0846741A1 Expired / Lapsed EP ⏱️ 0.0 years remaining

Polishing composition

Assignee: Fujimi Inc
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Filing: 1997-12-03
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Granted: —
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Expires: 2017-12-03
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Abstract

Abstract A polishing composition comprising fumed silica, a basic potassium compound and water, of which the specific electric conductivity is from 100 to 5,500 µS/cm.

Inventors

  • 👤 Shirou c/o Fujimi Incorporated Miura
  • 👤 Atsunori c/o Fujimi Incorporated Kawamura
  • 👤 Kazusei c/o Fujimi Incorporated Tamai

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-23 15:34
CPC Classifications
B; B24; B24B; B24B37/00; H; H10; H10P; H10P90/00; H10P90/12; H10P90/129; C; C01; C01B; C01B33/00; C01B33/113; C01B33/12; C01B33/18; C09; C09G; C09G1/00; C09G1/02; C09K; C09K3/00; C09K3/14; H10P52/00

Claims Analysis

Total Claims: 17
Claim 1
Independent Claim 24 words
A polishing composition comprising fumed silica, a basic potassium compound and water, of which the specific electric conductivity is from 100 to 5,500 µS/cm.
Claim 2
Dependent Claim 40 words
The polishing composition according to Claim 1, wherein the basic potassium compound is selected from the group consisting of a hydroxide, a phosphate, a pyrophosphate, a phosphite, a carbonate, a silicate, a borate, a hypochlorite, a hypobromite and a carboxylate.
Claim 3
Dependent Claim 33 words
The polishing composition according to Claim 1 or 2, wherein, based on the total amount of the polishing composition, the basic potassium compound is in an amount of from 0.01 to 0.5 wt%.
Claim 4
Dependent Claim 24 words
A polishing composition comprising fumed silica, a nitrogen-containing basic compound and water, of which the specific electric conductivity is from 100 to 1,500 µS/cm.
Claim 5
Dependent Claim 44 words
The polishing composition according to Claim 4, wherein the nitrogen-containing basic compound is selected from the group consisting of an ammonium hydroxide, an ammonium phosphate, an ammonium carbonate, an ammonium silicate, an ammonium borate, an ammonium hypochlorite, an ammonium hypobromite and an amine compound.
Claim 6
Dependent Claim 33 words
The polishing composition according to Claim 4 or 5, wherein, based on the total amount of the polishing composition, the nitrogen-containing basic compound is in an amount of from 0.01 to 1 wt%.
Claim 7
Dependent Claim 28 words
The polishing composition according to any one of Claims 1 to 6, wherein the fumed silica has a mean primary particle size of from 5 to 80 nm.
Claim 8
Dependent Claim 20 words
A polishing composition comprising colloidal silica and water, of which the specific electric conductivity is from 30 to 5,000 µS/cm.
Claim 9
Dependent Claim 14 words
The polishing composition according to Claim 8, which also contains a basic potassium compound.
Claim 10
Dependent Claim 40 words
The polishing composition according to Claim 9, wherein the basic potassium compound is selected from the group consisting of a hydroxide, a phosphate, a pyrophosphate, a phosphite, a carbonate, a silicate, a borate, a hypochlorite, a hypobromite and a carboxylate.
Claim 11
Dependent Claim 32 words
The polishing composition according to Claim 9 or 10, wherein, based on the total amount of the polishing composition, the basic potassium compound is in an amount of at most 1.5 wt%.
Claim 12
Dependent Claim 24 words
A polishing composition comprising colloidal silica, a nitrogen-containing basic compound and water, of which the specific electric conductivity is from 30 to 1,500 µS/cm.
Claim 13
Dependent Claim 47 words
The polishing composition according to Claim 12, wherein the nitrogen-containing basic compound is selected from the group consisting of an ammonium hydroxide, an ammonium phosphate, an ammonium carbonate, an ammonium silicate, an ammonium borate, an ammonium hypochlorite, an ammonium hypobromite, an ammonium carboxylate and an amine compound.
Claim 14
Dependent Claim 33 words
The polishing composition according to Claim 12 or 13, wherein, based on the total amount of the polishing composition, the nitrogen-containing basic compound is in an amount of from 0.01 to 0.5 wt%.
Claim 15
Dependent Claim 28 words
The polishing composition according to any one of Claims 8 to 14, wherein the colloidal silica has a mean primary particle size of from 5 to 200 nm.
Claim 16
Dependent Claim 23 words
Use of the polishing composition as defined in claim 1, 4, 8 or 12 as a composition for polishing a silicon dioxide film.
Claim 17
Dependent Claim 32 words
A method for polishing a silicon dioxide film, wherein the polishing composition as defined in Claim 1, 4, 8 or 12 is used as a composition for polishing the silicon dioxide film.

References Cited (Backward Citations)

SU457712A1 Cited
SU859406A1 Cited
SU943264A1 Cited
RU1781270C Cited
EP0520109A1 Cited
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JPH06163490A Cited
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JPH08267356A Cited

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