EP0248274A2
Expired / Lapsed
EP
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Plasma surface treatment method and apparatus
Assignee: Hitachi Ltd
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Filing: 1987-05-20
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Granted: —
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Expires: 2007-05-20
Abstract
Abstract The object of this invention is to provide a plasma surface treatment method and apparatus permitting the treatment of a film with plasma with a high treatment speed and a high efficiency without uselessly complicating the construction of a device for realizing it. In order to achieve this object, this invention is characterized in that the area where the counter electrode (ll) is in contact with the plasma is sufficiently larger than the area where the rotating electrode (8) is in contact therewith. The ratio of the areas is preferably not smaller than l.5. According to this invention it becomes possible to increase the etching speed to a value more than ten times as great as that obtained by a prior art method.
Inventors
- 👤 Yuichi Kokaku
- 👤 Makoto Kitoh
- 👤 Yoshinori Honda
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-23 12:40
CPC Classifications
B; B29; B29C; B29C59/00; B29C59/14; B29C71/00; B29C71/04; B29C37/00; B29C2037/90
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
99 words
Plasma surface treatment apparatus for treating a film with plasma, comprising: means (7, 9, l0) for winding said film (6) forwarded in a fixed direction round a grounded rotating electrode (8); means (4) for applying a high frequency voltage to a counter electrode (ll) disposed against said rotating electrode (8); and means (5, l2) for introducing gas between said rotating electrode (8) and said counter electrode (ll) to produce said plasma, the area where said counter electrode (ll) is in contact with said plasma being sufficiently larger than the area where said rotating electrode (8) is in contact therewith.
Claim 2
Dependent Claim
99 words
Plasma surface treatment apparatus for treating a film with plasma, comprising: means (7, 9, l0) for winding said film (6) forwarded in a fixed direction round a grounded rotating electrode (8); means (4) for applying a high frequency voltage to a counter electrode (ll) disposed against said rotating electrode (8); and means (5, l2) for introducing gas between said rotating electrode (8) and said counter electrode (ll) to produce said plasma, the area where said counter electrode (ll) is in contact with said plasma being sufficiently larger than the area where said rotating electrode (8) is in contact therewith.
Claim 3
Dependent Claim
41 words
Plasma surface treatment apparatus according to Claim l, wherein the area where said counter electrode (ll) is in contact with said plasma is at least l.5 times as large as the area where said rotating electrode (8) is in contact therewith.
Claim 4
Dependent Claim
41 words
Plasma surface treatment apparatus according to Claim l, wherein the area where said counter electrode (ll) is in contact with said plasma is at least 3 times as large as the area where said rotating electrode (8) is in contact therewith.
Claim 5
Dependent Claim
34 words
Plasma surface treatment method according to Claim l, wherein a number of small holes are formed in said counter electrode (ll) so that said gas is introduced uniformly therethrough into a treatment chamber (3).
Claim 6
Dependent Claim
22 words
Plasma surface treatment apparatus according to Claim l, wherein said counter electrode (ll) and said rotating electrode (8) are cooled with water.
Claim 7
Dependent Claim
103 words
Plasma surface treatment apparatus for treating a film with plasma, comprising: means (7, 9, l0) for winding said film (6) forwarded in a fixed direction round a grounded rotating electrode (8); means (4) for applying a high frequency voltage to a plurality of counter electrodes (ll) disposed against said rotating electrode (8); and means (5, l2) for introducing gas between said rotating electrode (8) and said counter electrode (ll) to produce said plasma, the area where each of said counter electrodes (ll) is in contact with said plasma being sufficiently larger than the area where said rotating electrode (8) is in contact therewith.
Claim 8
Dependent Claim
103 words
Plasma surface treatment apparatus for treating a film with plasma, comprising: means (7, 9, l0) for winding said film (6) forwarded in a fixed direction round a grounded rotating electrode (8); means (4) for applying a high frequency voltage to a plurality of counter electrodes (ll) disposed against said rotating electrode (8); and means (5, l2) for introducing gas between said rotating electrode (8) and said counter electrode (ll) to produce said plasma, the area where each of said counter electrodes (ll) is in contact with said plasma being sufficiently larger than the area where said rotating electrode (8) is in contact therewith.
Claim 9
Dependent Claim
43 words
Plasma surface treatment apparatus according to Claim 6, wherein the area where each of said counter electrodes (ll) is in contact with said plasma is at least l.5 times as large as the area where said rotating electrode (8) is in contact therewith.
Claim 10
Dependent Claim
43 words
Plasma surface treatment apparatus according to Claim 6, wherein the area where each of said counter electrodes (ll) is in contact with said plasma is at least 3 times as large as the area where said rotating electrode (8) is in contact therewith.
Claim 11
Dependent Claim
36 words
Plasma surface treatment apparatus according to Claim 6, wherein a number of small holes are formed in each of said counter electrodes (ll) so that said gas is introduced uniformly therethrough into a treatment chamber (3).
Claim 12
Dependent Claim
25 words
l0. Plasma surface treatment apparatus according to Claim 6, wherein each of said counter electrodes (ll) and said rotating electrode (8) are cooled with water.
Claim 13
Dependent Claim
90 words
Plasma surface treatment method for treating a film with plasma comprising the steps of: winding said film (6) forwarded in a fixed direction round a grounded rotating electrode (8); applying a high frequency voltage to a counter electrode (ll) disposed against said rotating electrode (8); and introducing gas between said rotating electrode (8) and said counter electrode (ll) to produce said plasma, the area where said counter electrode (ll) is in contact with said plasma being sufficiently larger than the area where said rotating electrode (8) is in contact therewith.
Claim 14
Dependent Claim
90 words
Plasma surface treatment method for treating a film with plasma comprising the steps of: winding said film (6) forwarded in a fixed direction round a grounded rotating electrode (8); applying a high frequency voltage to a counter electrode (ll) disposed against said rotating electrode (8); and introducing gas between said rotating electrode (8) and said counter electrode (ll) to produce said plasma, the area where said counter electrode (ll) is in contact with said plasma being sufficiently larger than the area where said rotating electrode (8) is in contact therewith.
Claim 15
Dependent Claim
41 words
Plasma surface treatment method according to Claim ll, wherein the area where said counter electrode (ll) is in contact with said plasma is at least l.5 times as large as the area where said rotating electrode (8) is in contact therewith.
Claim 16
Dependent Claim
41 words
Plasma surface treatment method according to Claim ll, wherein the area where said counter electrode (ll) is in contact with said plasma is at least 3 times as large as the area where said rotating electrode (8) is in contact therewith.
Claim 17
Dependent Claim
34 words
Plasma surface treatment method according to Claim ll, wherein a number of small holes are formed in said counter electrode (ll) so that said gas is introduced uniformly therethrough into a treatment chamber (3).
Claim 18
Dependent Claim
22 words
Plasma surface treatment method according to Claim ll, wherein said counter electrode (ll) and said rotating electrode (8) are cooled with water.
References Cited (Backward Citations)
No citation records indexed.
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