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EP0230927A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Diamond manufacturing

Assignee: Sumitomo Electric Industries Ltd
•
Filing: 1987-01-16
•
Granted: —
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Expires: 2007-01-16
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Abstract

Abstract A process for manufacturing diamonds in accordance with the so-called low-pressure gas-phase diamond synthesizing process including activation a mixed gas of hydrogen and hydrocarbon and causing diamond to be deposited on the surface of substrates heated to higher than 600°C and lower than 1,200°C. The process includes the steps of activating the material gas using a thermal electron radiating material heated to higher than 1,600°C; and forming high-frequency plasma by providing capacitive coupling type feeding between the thermal electron material and an electrode within a reaction container or the reaction container itself (when it is conductive) or an external electrode arranged outside the reaction container (when it is an insulator) using a high-frequency power supply.

Inventors

  • 👤 Akihiko Itami Wks Sumitomo El. Ind. Ltd. Ikegaya
  • 👤 Masaaki Itami Wks Sumitomo El. Ind. Ltd. Tobioka
  • 👤 Toshio Itami Wks Sumitomo El. Ind. Ltd. Nomura

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-23 16:01
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/26; C23C16/27; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/02; C30B29/04

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 92 words
A low pressure gas-phase diamond synthesizing process, comprising the steps of: heating a substrate to higher than 600°C and lower than 1,200°C; activating a mixed gas of hydrogen and hydrocarbon using a thermal electron radiating material heated to higher than 1,600°C; forming high-frequency plasma by providing capacitive coupling type feeding to the thermal electron radiating material using a high-frequency power supply so as to employ activation implemented by the thermal electron radiating material and what is effected by the formation of the high-frequency plasma; and depositing diamond on surfaces of said substrate.
Claim 2
Dependent Claim 92 words
A low pressure gas-phase diamond synthesizing process, comprising the steps of: heating a substrate to higher than 600°C and lower than 1,200°C; activating a mixed gas of hydrogen and hydrocarbon using a thermal electron radiating material heated to higher than 1,600°C; forming high-frequency plasma by providing capacitive coupling type feeding to the thermal electron radiating material using a high-frequency power supply so as to employ activation implemented by the thermal electron radiating material and what is effected by the formation of the high-frequency plasma; and depositing diamond on surfaces of said substrate.
Claim 3
Dependent Claim 40 words
A process according to claim 1 wherein said step of forming a high-frequency plasma comprises the step of forming a plasma by providing capacitive coupling type feeding between said thermal electron radiating material and an electrode within said reaction container.
Claim 4
Dependent Claim 40 words
A process according to claim 1 wherein said step of forming a high-frequency plasma comprises the step of forming a plasma by providing capacitive coupling type feeding between said thermal electron radiating material and said reaction container which is conductive.
Claim 5
Dependent Claim 41 words
A process according to claim 1 wherein said step of forming a high-frequency plasma comprises the step of forming a plasma by providing capacitive coupling type feeding between said thermal electron radiating material and an electrode external to said reaction container.
Claim 6
Dependent Claim 20 words
A process according to claim 1 further comprising the step of rotating said substrate during deposition of the diamond material
Claim 7
Dependent Claim 23 words
A process according to claim 1 further comprising the step of providing said substrate with a d.c. bias using a d.c. power supply.

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