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EP0225969A1 Expired / Lapsed EP ⏱️ 0.0 years remaining

Apparatus and method for controlling irradiation of electron beam at fixed position in electron beam tester system

Assignee: Toshiba Corp
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Filing: 1986-08-14
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Granted: —
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Expires: 2006-08-14
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Abstract

Abstract When the state of the surface of a specific pattern of a sample (14) to be measured is measured by use of an electron beam tester system, a pattern for a fixed scanning area including the selected specific pattern of the surface of the sample (14) to be measured is detected before measurement; binarized image signal of a deflection current of a deflecting coil (13), position of an XY stage (15), and a scanning area when this pattern was detected is stored into a memory device (27); the irradiation of an electron beam (EB) onto the specific pattern is interrupted during the measurement of the sample (14) to be measured; the pattern forthe scanning area is again detected; the binarized image signal of the deflection current of the deflection coil (13), position of the XY stage (15), and scanning area is obtained; the result of the detection of this pattern is compared with the result of the detection of the pattern before the measurement which has been stored in the memory device (27); the direction and amount of drift of the electron beam (EB) caused during the measurement of the sample (14) to be measured are calculated; the deflecting coil (13) is controlled in a feedback manner on the basis of the result of this calculation; and the irradiating position of the electron beam (EB) at the restart of the measurement is corrected.

Inventors

  • 👤 Fumio C/O Patent Division Komatsu
  • 👤 Motosuke C/O Patent Division Miyoshi
  • 👤 Katsuya C/O Patent Division Okumura

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-23 17:20
CPC Classifications
G; G01; G01R; G01R31/00; G01R31/28; G01R31/302; G01R31/305

Claims Analysis

Total Claims: 11
Claim 1
Independent Claim 651 words
A fixed position irradiating control apparatus of an electron beam for correcting a deviation of an irradiating position due to a drift of the electron beam (EB) during measurement of a sample to be measured in an electron beam tester system comprising: an electron gun (11) for generating the electron beam (EB); a deflecting coil (13) for deflecting the electron beam (EB) generated from said electron gun (11); the sample (14) to be measured onto which the electron beam (EB) generated from the electron gun (11) is irradiated; a scintillator (17) for detecting a secondary electron generated due to the irradiation of the electron beam (EB) onto the sample (14) to be measured; a current/voltage converter (20) for converting an output current of said scintillator (17) to a voltage corresponding to said current; and an image display device (22) to which an output of said current/voltage converter (20) is supplied and which displays an image which is derived due to the irradiation of the electron beam (EB) onto the sample (14) to be measured, characterized in that said apparatus comprises: binarizing means (23) for binarizing the output voltage of said current/voltage converter (20); reference pattern data memory means (27) for irradiating the electron beam (EB) from said electron gun (11) onto a scanning area (32) including a specific pattern (31) selected from the sample (14) to be measured prior to measuring the sample (14) to be measured, for detecting the secondary electron obtained due to the irradiation of the electron beam (EB) by said scintillator (17), and for storing a binarized signal, as reference pattern data (3lA), which is obtained by said binarizing means (23) by binarizing the image signal derived by converting the output current of said scintillator (17) to the voltage by said current/voltage converter (20); analog/digital converting means (29) for converting an analog deflection current which is supplied to the deflecting coil (13) to digital data; reference deflection current memory means (27) for storing a value of said deflection current converted to the digital data by said analog/digital converting means (29) when said reference pattern data (31A) is obtained; comparison pattern data memory means (27) for interrupting the measurement of said sample (14) to be measured, for deflecting the electron beam (EB) by supplying the deflection current stored in said reference deflection current memory means (27) to said deflecting coil (13), detecting by the scintillator (17) the secondary electron obtained due to the irradiation of the electron beam (EB), and for storing the binarized signal, as comparison pattern data (31A'), obtained by binarizing by said binarizing means (23) the image signal which is obtained by converting the output current of the scintillator (17) to the voltage by said current/voltage converter (20); comparison deflection current memory means (27) for storing the deflection current which is derived by converting the analog deflection current to said deflecting coil (13) when said comparison pattern data (31A') is obtained to the digital data; exclusive OR means (21) for obtaining an exclusive OR between the reference pattern data (31A) stored in said reference pattern data memory means (27) and the comparison pattern data (31A') stored in said comparison pattern data memory means (27); deviation amount calculating means (21) for calculating deviation amounts in X and Y directions of said comparison pattern data (31A') on the basis of said exclusive OR data derived by said exclusive OR means (21) and said reference pattern data (31A); deflection current converting means (21) for converting the deviation amounts calculated by said deviation amount calculating means (21) for said reference pattern data (31A) of the comparison pattern data (31A') to deflection currents of said deflecting coil (13); and digital/analog converting means (30) for converting the digital deviation amounts converted to the deflection currents which are output from said deflection current converting means (21) to the analog data and for supplying as drift correction data to the deflecting coil (13).
Claim 2
Dependent Claim 651 words
A fixed position irradiating control apparatus of an electron beam for correcting a deviation of an irradiating position due to a drift of the electron beam (EB) during measurement of a sample to be measured in an electron beam tester system comprising: an electron gun (11) for generating the electron beam (EB); a deflecting coil (13) for deflecting the electron beam (EB) generated from said electron gun (11); the sample (14) to be measured onto which the electron beam (EB) generated from the electron gun (11) is irradiated; a scintillator (17) for detecting a secondary electron generated due to the irradiation of the electron beam (EB) onto the sample (14) to be measured; a current/voltage converter (20) for converting an output current of said scintillator (17) to a voltage corresponding to said current; and an image display device (22) to which an output of said current/voltage converter (20) is supplied and which displays an image which is derived due to the irradiation of the electron beam (EB) onto the sample (14) to be measured, characterized in that said apparatus comprises: binarizing means (23) for binarizing the output voltage of said current/voltage converter (20); reference pattern data memory means (27) for irradiating the electron beam (EB) from said electron gun (11) onto a scanning area (32) including a specific pattern (31) selected from the sample (14) to be measured prior to measuring the sample (14) to be measured, for detecting the secondary electron obtained due to the irradiation of the electron beam (EB) by said scintillator (17), and for storing a binarized signal, as reference pattern data (3lA), which is obtained by said binarizing means (23) by binarizing the image signal derived by converting the output current of said scintillator (17) to the voltage by said current/voltage converter (20); analog/digital converting means (29) for converting an analog deflection current which is supplied to the deflecting coil (13) to digital data; reference deflection current memory means (27) for storing a value of said deflection current converted to the digital data by said analog/digital converting means (29) when said reference pattern data (31A) is obtained; comparison pattern data memory means (27) for interrupting the measurement of said sample (14) to be measured, for deflecting the electron beam (EB) by supplying the deflection current stored in said reference deflection current memory means (27) to said deflecting coil (13), detecting by the scintillator (17) the secondary electron obtained due to the irradiation of the electron beam (EB), and for storing the binarized signal, as comparison pattern data (31A'), obtained by binarizing by said binarizing means (23) the image signal which is obtained by converting the output current of the scintillator (17) to the voltage by said current/voltage converter (20); comparison deflection current memory means (27) for storing the deflection current which is derived by converting the analog deflection current to said deflecting coil (13) when said comparison pattern data (31A') is obtained to the digital data; exclusive OR means (21) for obtaining an exclusive OR between the reference pattern data (31A) stored in said reference pattern data memory means (27) and the comparison pattern data (31A') stored in said comparison pattern data memory means (27); deviation amount calculating means (21) for calculating deviation amounts in X and Y directions of said comparison pattern data (31A') on the basis of said exclusive OR data derived by said exclusive OR means (21) and said reference pattern data (31A); deflection current converting means (21) for converting the deviation amounts calculated by said deviation amount calculating means (21) for said reference pattern data (31A) of the comparison pattern data (31A') to deflection currents of said deflecting coil (13); and digital/analog converting means (30) for converting the digital deviation amounts converted to the deflection currents which are output from said deflection current converting means (21) to the analog data and for supplying as drift correction data to the deflecting coil (13).
Claim 3
Dependent Claim 42 words
An apparatus according to claim 1, characterized in that said reference pattern data memory means, said reference deflection current memory means, said comparison pattern data memory means, and said comparison deflection current memory means are constituted by one magnetic disk device (27).
Claim 4
Dependent Claim 30 words
An apparatus according to claim 1, characterized in that said exclusive OR means, said deviation amount calculating means, and said deflection current converting means are constituted by a CPU (21).
Claim 5
Dependent Claim 18 words
An apparatus according to claim 1, characterized in that said binarizing means consists of a voltage comparator (23).
Claim 6
Dependent Claim 34 words
An apparatus according to claim 1, characterized by further comprising a blanking electrode (12) for blanking-controlling the electron beam (EB) which is generated from said electron gun (11) and producing a pulse-form electron beam.
Claim 7
Dependent Claim 28 words
An apparatus according to claim 1, characterized by further comprising a preamplifier (19) for amplifying the output of said scintillator (17) and supplying to said current/voltage converter (20).
Claim 8
Dependent Claim 34 words
An apparatus according to claim 1, characterized by further comprising a test vector generator (16) for supplying a test vector signal and an operating power source voltage to said sample (14) to be measured.
Claim 9
Dependent Claim 276 words
A fixed position irradiation control method of an electron beam for correcting a drift of the electron beam in an electron beam tester system in which the electron beam is irradiated onto a sample to be measured and a secondary electron which is generated from said sample to be measured is detected and a measurement of the sample to be measured is performed, characterized in that said method comprises the steps of: selecting one of arbitrary pattern images of the sample to be measured as a reference pattern image (STEP 1); storing a deflection current value, as a reference deflection current, of a deflecting coil when said reference pattern image is obtained (STEP 2); binarizing an image signal of a scanning area including said selected reference pattern image and obtaining reference pattern data (STEP 3); storing said reference pattern data (STET 4); starting the measurement of said sample to be measured (STEP 5); interrupting the measurement of said sample to be measured (STEP 6); supplying said stored reference deflection current to the deflecting coil (STEP 7); binarizing the pattern image obtained due to the supply of said reference deflection current to the deflecting coil and obtaining comparison pattern data (STEP 8); comparing said reference pattern data with said comparison pattern data (STEP 9); obtaining a deviation amount of the pattern on the basis of the result of said comparing process and the reference pattern data (STEP 10); calculating a DC offset bias amount of the deflecting coil from the deviation amount of said pattern (STEP 11); and converting said digital DC offset bias data to the analog data and supplying to the deflecting coil (STEP 12).
Claim 10
Dependent Claim 276 words
A fixed position irradiation control method of an electron beam for correcting a drift of the electron beam in an electron beam tester system in which the electron beam is irradiated onto a sample to be measured and a secondary electron which is generated from said sample to be measured is detected and a measurement of the sample to be measured is performed, characterized in that said method comprises the steps of: selecting one of arbitrary pattern images of the sample to be measured as a reference pattern image (STEP 1); storing a deflection current value, as a reference deflection current, of a deflecting coil when said reference pattern image is obtained (STEP 2); binarizing an image signal of a scanning area including said selected reference pattern image and obtaining reference pattern data (STEP 3); storing said reference pattern data (STET 4); starting the measurement of said sample to be measured (STEP 5); interrupting the measurement of said sample to be measured (STEP 6); supplying said stored reference deflection current to the deflecting coil (STEP 7); binarizing the pattern image obtained due to the supply of said reference deflection current to the deflecting coil and obtaining comparison pattern data (STEP 8); comparing said reference pattern data with said comparison pattern data (STEP 9); obtaining a deviation amount of the pattern on the basis of the result of said comparing process and the reference pattern data (STEP 10); calculating a DC offset bias amount of the deflecting coil from the deviation amount of said pattern (STEP 11); and converting said digital DC offset bias data to the analog data and supplying to the deflecting coil (STEP 12).
Claim 11
Dependent Claim 38 words
A method according to claim 8, characterized in that, in the step of comparing said reference pattern data with said comparison pattern data, an exclusive OR between said reference pattern data and said comparison pattern data is calculated.

References Cited (Backward Citations)

DD105902A1 Cited
DE2805673A1 Cited

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