EP0223920A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
Assignee: International Business Machines Corp
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Filing: 1986-07-29
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Granted: —
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Expires: 2006-07-29
Abstract
Abstract A method is disclosed for producing coplanar metal/insulator films on a substrate according to a chem-mech polishing technique. In one example, a substrate (31) having a patterned insulating layer (32) of dielectric material thereon, is coated with a layer of metal (34). The substrate is then placed in a parallel polisher and the metal is removed elsewhere except in the holes (33) where it is left intact (34a). This is made possible through the use of an improved selective slurry which removes the metal much faster than the dielectric material. The insulating layer may then be used as an automatic etch stop barrier.
Inventors
- 👤 Klaus Dietrich Beyer
- 👤 William Leslie Guthrie
- 👤 Stanley Richard Markarewicz
- 👤 Eric Mendel
- 👤 William John Patrick
- 👤 Kathleen Alice Perry
- 👤 William Aaron Pliskin
- 👤 Jacob Riseman
- 👤 Paul Martin Schiable
- 👤 Charles Lamber Standley
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-23 15:35
CPC Classifications
H; H10; H10P; H10P52/00; H10P50/00; H10P50/60; H10P50/66; H10P50/663; H10P50/667; H10P95/00; H10P95/06; H10P95/062; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/062
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
118 words
A method for producing a structure comprising substantially coplanar conductive and insulator films on a substrate comprising the steps of: forming a first layer of either said conductive film or said insulator film on said substrate, said first layer having a non-planar upper surface, depositing a second layer of the other of said conductive film or said insulator film on said first layer, said second layer having an upper surface generally following the topology of the upper surface of said first layer, and chem-mech polishing said structure using a slurry in order to remove said second layer at a faster rate than said first layer until the upper surfaces of said first and second layers are substantially coplanar.
Claim 2
Independent Claim
118 words
A method for producing a structure comprising substantially coplanar conductive and insulator films on a substrate comprising the steps of: forming a first layer of either said conductive film or said insulator film on said substrate, said first layer having a non-planar upper surface, depositing a second layer of the other of said conductive film or said insulator film on said first layer, said second layer having an upper surface generally following the topology of the upper surface of said first layer, and chem-mech polishing said structure using a slurry in order to remove said second layer at a faster rate than said first layer until the upper surfaces of said first and second layers are substantially coplanar.
Claim 3
Dependent Claim
35 words
The method of claim 1 wherein said first layer is said insulator film and said second layer is at least as thick as the extent of non-planarity of said upper surface of said first layer.
Claim 4
Dependent Claim
34 words
The method of claim 1 wherein said first layer is said conductive film and said second layer is not as thick as the extent of non-planarity of said upper surface of said first layer.
Claim 5
Dependent Claim
15 words
The method of claim 1 wherein said slurry comprises a solution of dispersed alumina powder.
Claim 6
Dependent Claim
23 words
The method of claim 1 wherein said first layer is said conductive film and said slurry comprises a solution of dispersed silica particles.
Claim 7
Dependent Claim
20 words
The method defined in claim 4 wherein said solution is an acidic solution and said conductive film is a metal.
Claim 8
Dependent Claim
26 words
The method defined in claim 6 wherein said metal is selected from the group comprised of Al, Al-Si and Al-Cu and the insulating film is SiO₂.
Claim 9
Dependent Claim
18 words
The method defined in claim 7 wherein said acidic solution has a pH of less than about 3.
Claim 10
Dependent Claim
23 words
The method defined in claim 8 wherein said acidic solution comprises an acid selected from the group comprised of H₂SO₄, CH₃COOH and HNO₃.
Claim 11
Dependent Claim
21 words
The method defined in claim 1 wherein an etch stop barrier layer is placed in between said first and second layers.
Claim 12
Dependent Claim
17 words
The method in claim 1 wherein said steps are repeated in sequence a desired number of times.
References Cited (Backward Citations)
No citation records indexed.
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