EP0211609A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Chemically sensitive semiconductor devices and their production
Assignee: Unilever PLC
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Filing: 1986-07-30
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Granted: —
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Expires: 2006-07-30
Abstract
Abstract A process for producing encapsulated semiconductor devices, which comprises using planar semiconductor-device-forming technique known per se to form a plurality of spaced semiconductor devices on a wafer, etching between the devices so formed, and passivating the etched array of devices, wherein:- (a) the wafer is mounted on an inert solid sheet substrate; (b) after application of the per se - known semiconductor-device-forming technique to the wafer, a selective etching process is applied to divide the mounted wafer into a plurality of separate portions of the wafer material carrying semiconductor devices, each portion mounted on the substrate; (c) a passivating process is applied to the devices to cover them with passivating material and this is followed afterwards by etching to reveal locations for ohmic connections thereon; and (d) the devices are then separated by cutting or breaking the substrate sheet into portions carrying semiconductor devices in which no part of the semiconductor-wafer materials (except ohmic contact locations) is left uncovered by passivating material.
Inventors
- 👤 Claes Ivan Nylander
- 👤 Ian Alexander Shanks
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-23 19:36
CPC Classifications
G; G01; G01N; G01N27/00; G01N27/26; G01N27/403; G01N27/414; H; H10; H10P; H10P54/00; H10W; H10W74/00; H10W74/10; H10W74/131; H10W74/137
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
162 words
A process for producing encapsulated semiconductor devices, which comprises using planar semiconductor-device-forming technique known per se to form a plurality of spaced semiconductor devices on a wafer, etching between the devices so formed, and passivating the etched array of devices, wherein:- (a) the wafer is mounted on an inert solid sheet substrate; (b) after application of the per se - known semiconductor-device-forming technique to the wafer, a selective etching process is applied to divide the mounted wafer into a plurality of separate portions of the wafer material carrying semiconductor devices, each portion mounted on the substrate; (c) a passivating process is applied to the devices to cover them with passivating material and this is followed afterwards by etching to reveal locations for ohmic connections thereon; and (d) the devices are then separated by cutting or breaking the substrate sheet into portions carrying semiconductor devices in which no part of the semiconductor-wafer materials (except ohmic contact locations) is left uncovered by passivating material.
Claim 2
Dependent Claim
162 words
A process for producing encapsulated semiconductor devices, which comprises using planar semiconductor-device-forming technique known per se to form a plurality of spaced semiconductor devices on a wafer, etching between the devices so formed, and passivating the etched array of devices, wherein:- (a) the wafer is mounted on an inert solid sheet substrate; (b) after application of the per se - known semiconductor-device-forming technique to the wafer, a selective etching process is applied to divide the mounted wafer into a plurality of separate portions of the wafer material carrying semiconductor devices, each portion mounted on the substrate; (c) a passivating process is applied to the devices to cover them with passivating material and this is followed afterwards by etching to reveal locations for ohmic connections thereon; and (d) the devices are then separated by cutting or breaking the substrate sheet into portions carrying semiconductor devices in which no part of the semiconductor-wafer materials (except ohmic contact locations) is left uncovered by passivating material.
Claim 3
Dependent Claim
23 words
A process according to claim 1, wherein the semiconductor-device-forming technique in step (b) is applied after the wafer is mounted on the substrate.
Claim 4
Dependent Claim
19 words
A process according to claim 1, wherein a wafer carrying semiconductor devices formed thereon is mounted on the substrate.
Claim 5
Dependent Claim
17 words
A process according to claim 1, 2 or 3 wherein the substrate is of ceramic sheet material.
Claim 6
Dependent Claim
16 words
A process according to claim 1, 2 or 3 wherein the substrate is of plastics material.
Claim 7
Dependent Claim
182 words
A process according to claim 1, comprising the steps of: 1) coating a semiconductor wafer carrying an array of semiconductor devices thereon, with passivating material, 2) mounting the coated wafer on a substrate to form an assembly, using an adhesive capable of withstanding subsequent coating and etching processes, 3) using photolithographic techniques and chemical etching, removing the layer of passivating material from regions surrounding the devices leaving islands of passivating material over said devices, 4) similarly removing the semiconductor wafer material left exposed by the removal of the passivating material in step (3), 5) depositing a further layer of passivating material over the entire surface of the assembly thereby to cover any exposed semiconductor and previous passivating layers which remain, 6) applying a photoresist, exposing and etching to remove passivating material in those regions where ohmic connections are to be made to the devices, 7) depositing conductive material to form the said ohmic connections (if not already present) by photolithographic technique and chemical etching, and 8) cutting or otherwise separating the assembly into individual units each containing at least one semiconductor device.
Claim 8
Dependent Claim
30 words
A process according to claim 6, wherein the wafer is of silicon, carrying chemically sensitive fet devices thereon, the substrate is of ceramic, and the passivating material comprises silicon nitride.
Claim 9
Dependent Claim
70 words
An array of semiconductor devices comprising devices in the form of mesas mounted on the surface of an inert carrier substrate, said array having been formed by etching a semiconductor wafer carrying said devices so as to sever said wafer completely thereby to leave said mounted devices in the form of mesas, wherein passivating material covers all the surfaces of the semiconductor material forming said devices except for ohmic locations.
Claim 10
Dependent Claim
70 words
An array of semiconductor devices comprising devices in the form of mesas mounted on the surface of an inert carrier substrate, said array having been formed by etching a semiconductor wafer carrying said devices so as to sever said wafer completely thereby to leave said mounted devices in the form of mesas, wherein passivating material covers all the surfaces of the semiconductor material forming said devices except for ohmic locations.
Claim 11
Dependent Claim
31 words
Processes according to claim 1, and device arrays and their derivatives as claimed in claim 8, comprising any one or more of the several features of the foregoing description and drawings.
References Cited (Backward Citations)
No citation records indexed.
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