EP0095384A2
Expired / Lapsed
EP
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Vacuum deposition apparatus
Assignee: Konica Minolta Inc
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Filing: 1983-05-25
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Granted: —
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Expires: 2003-05-25
Abstract
Abstract The invention provides vaccum deposition apparatus including a chamber (3), a vapor source (2), a deposition substrate (1) opposite to the vapor source (2) and an inlet (6) for a modifying gas, wherein in use the vapor source (2) is heated in the presence of a modifying gas to be deposited onto the substrate, characterized by an electron-beam supplying device (10,40) for emitting an electron-beam toward the substrate (1). The supply of electrons ionizes the gas only near the film surface being deposited thus allowing more even introduction.
Inventors
- 👤 Masanari Shindo
- 👤 Shigeru Sato
- 👤 Shigeru Mano
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-23 17:53
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/24; C23C14/32; C23C14/0021
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
66 words
Vacuum deposition apparatus including a chamber (3), a vapor source (2), a deposition substrate (1) opposite to the vapor source (2) and an inlet (6) for a modifying gas, wherein in use the vapor source (2) is heated in the presence of a modifying gas to be deposited onto the substrate, characterized by an electron-beam supplying device (10,40) for emitting an electron-beam toward the substrate (1).
Claim 2
Dependent Claim
66 words
Vacuum deposition apparatus including a chamber (3), a vapor source (2), a deposition substrate (1) opposite to the vapor source (2) and an inlet (6) for a modifying gas, wherein in use the vapor source (2) is heated in the presence of a modifying gas to be deposited onto the substrate, characterized by an electron-beam supplying device (10,40) for emitting an electron-beam toward the substrate (1).
Claim 3
Dependent Claim
25 words
Apparatus according to claim 1 or 2 characterized in that the electron-beam supplying device is a thermoelectron generator (10) or a gas discharge tube (40).
Claim 4
Dependent Claim
14 words
Apparatus according to claim 1 or 2 characterized by an electron-beam accelerating device (16).
Claim 5
Dependent Claim
21 words
Apparatus according to claim 1, 2 or 3 characterized by a magnetic field-deflecting device (26,27) or an electric field-deflecting device (18,19).
Claim 6
Dependent Claim
45 words
A vacuum deposition method for formation of a layer wherein a vapor source is heated in the presence of a modifying gas to be deposited onto a substrate opposite to the vapor source, characterized in that an electron-beam is generated and directed toward the substrate.
Claim 7
Dependent Claim
45 words
A vacuum deposition method for formation of a layer wherein a vapor source is heated in the presence of a modifying gas to be deposited onto a substrate opposite to the vapor source, characterized in that an electron-beam is generated and directed toward the substrate.
Claim 8
Dependent Claim
16 words
A method according to claim 5 characterized in that the layer is an amorphous silicon layer.
Claim 9
Dependent Claim
28 words
A method according to claim 5 or 6 characterized in that a negative voltage, preferably a DC voltage of 0 to -10 KV is applied to the substrate.
Claim 10
Dependent Claim
34 words
A method according to claim 5, 6 or 7 characterized in that the modifying gas is selected from the group consisting of hydrogen, oxygen, nitrogen, halogen, ammonia, monosilane, phosphine, diboran, allicin, hydrocarbons and olefins.
Claim 11
Dependent Claim
21 words
A method according to claim 5, 6, 7 or 8 characterized in that the electron-beam is accelerated by an accelerating device.
Claim 12
Independent Claim
22 words
A method according to any one of claims 5 to 9 characterized in that the electron-beam is made to scan the substrate.
References Cited (Backward Citations)
No citation records indexed.
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